The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will…
This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will be available for 1200V and…
This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC)…
This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC) that provides the…
Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules…
Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules (IPMs) to simplify HVAC…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT…
This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT synchronous rectification
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds…
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…
EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio,…
EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in…
KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in surface mount device (SMD)…
Power Integrations announced its LinkSwitch-TN2, a high-reliability, space-saving buck/flyback switcher ICs targeting 400…
Power Integrations announced its LinkSwitch-TN2, a high-reliability, space-saving buck/flyback switcher ICs targeting 400 VDC EV applications
Infineon Technologies launches the CoolSiC™ MOSFETs 1700Vs optimized for flyback topologies compatible with common PWM…
Infineon Technologies launches the CoolSiC™ MOSFETs 1700Vs optimized for flyback topologies compatible with common PWM controllers.
X-FAB highlights the availability of new medium-voltage transistors – complementing the company’s leading 180nm…
X-FAB highlights the availability of new medium-voltage transistors – complementing the company’s leading 180nm BCD-on-SOI technology platform…
This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off…
This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off frequencies, the MOSHEMTs.
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