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Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…


Taiwan Semiconductor Debuts Two Families of Fast Recovery Epitaxial Diodes

Taiwan Semiconductor Debuts Two Families of Fast Recovery Epitaxial Diodes

Micro SMA packaged, 25ns, max. reverse recovery time diodes are AEC-Q101 qualified; 1A- and 2A-rated parts feature low reverse leakage, low reverse…


Dialog Semiconductor Debuts ZVS Chipset for High Power Density PSUs

Dialog Semiconductor Debuts ZVS Chipset for High Power Density PSUs

The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.


Microchip Debuts a GaN-based Ka-band MMIC for SatCom Terminals

Microchip Debuts a GaN-based Ka-band MMIC for SatCom Terminals

The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range


Alpha and Omega Semiconductor Debuts a Series of High-Speed TVS Diodes

Alpha and Omega Semiconductor Debuts a Series of High-Speed TVS Diodes

The new single-channel, bidirectional Transient Voltage Suppressors (TVS) provide ESD protection for USB Type-C applications


Embedding Capacitors Into Interposers for Greater Miniaturization

Embedding Capacitors Into Interposers for Greater Miniaturization

A team of scientists from Tokyo Institute of Technology developed a 3D functional interposer that saves package area and allows for low noise and…


Regulated High-Voltage DC-DC Converters For Analytical, Semiconductor And Detector Applications

Regulated High-Voltage DC-DC Converters For Analytical, Semiconductor And Detector Applications

Cree and Gospower Partner to Give Silicon Carbide a Boost

Cree and Gospower Partner to Give Silicon Carbide a Boost

Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…


EPC Debuts a Radiation-Hardened eGaN FET for Tough Environments

EPC Debuts a Radiation-Hardened eGaN FET for Tough Environments

Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications


Silanna Semiconductor Debuts CO2 Smart Power Family of High Efficiency 100W DC-DC Converters

Silanna Semiconductor Debuts CO2 Smart Power Family of High Efficiency 100W DC-DC Converters

The tiny buck converters, aimed at USB-PD applications, operate over 7 to 27 VDC inputs and supply 3.3 to 21 VDC


Microchip Debuts a Radiation-Hardened MOSFET for Space-Based Applications

Microchip Debuts a Radiation-Hardened MOSFET for Space-Based Applications

The new 250-volt device, with an RDS(ON) of 0.21Ω, offers enhanced power circuit reliability for space and military applications.


ON Semiconductor Unveils a Complete Solution for Industrial Motor Drives

ON Semiconductor Unveils a Complete Solution for Industrial Motor Drives

The new device combines the converter, the inverter and power factor correction (PFC) functionality in a single module


E-PEAS Introduces Versatile New Buck-Boost ICs for Highly Efficient Energy Harvesting

E-PEAS Introduces Versatile New Buck-Boost ICs for Highly Efficient Energy Harvesting

E-PEAS features AEM10330 and AEM30330 PMICs distinguish themselves from the competition via their innovative buck-boost architecture.


Nordic Semiconductor Launches a Tiny USB-Compatible Power Management IC

Nordic Semiconductor Launches a Tiny USB-Compatible Power Management IC

The new power management IC (PMIC) channels power to applications and can also serve to charge the same application’s internal battery


ROHM’s 150V GaN HEMTs Sport a Rated Gate-Source Voltage of 8 Volts

ROHM’s 150V GaN HEMTs Sport a Rated Gate-Source Voltage of 8 Volts

With competing devices spec’d at 6 volts, ROHM’s devices will offer the designer a critical 2-volt edge.


Power Integrations Debuts a Family of ZVS Flyback Switcher ICs

Power Integrations Debuts a Family of ZVS Flyback Switcher ICs

The GaN-based units combine with the company’s ACF controller ICs to facilitate the design of USB-C mobile chargers


Silicon Labs Expands Isolated Gate Driver Product Family with Si828x Version 2

Silicon Labs Expands Isolated Gate Driver Product Family with Si828x Version 2

The Si828x features fast switching speeds, low switching loss, and strong thermal performance.


Energous and e-peas Create Wireless Charging Eval Board for Distances Greater than 1 Meter

Energous and e-peas Create Wireless Charging Eval Board for Distances Greater than 1 Meter

Two companies within the power electronics field, Energous and e-peas, have jointly designed an evaluation board, combining both of their…


Alpha and Omega Semiconductor’s New SPS Family is Aimed at Multiphase Voltage Regulators

Alpha and Omega Semiconductor’s New SPS Family is Aimed at Multiphase Voltage Regulators

The AOZ527xQI series from Alpha and Omega Semiconductor (AOS) provides three different DC current levels for optimal multiphase voltage regulation.


Murata’s 2W Bipolar Output SMT DC-DC Converters Address High-Voltage Gate Driver Applications

Murata’s 2W Bipolar Output SMT DC-DC Converters Address High-Voltage Gate Driver Applications

This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).