By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to…
The new power converter is available in a 33 x 22.9 mm 16th brick package and achieves efficiency levels of 95% and better
The new power converter is available in a 33 x 22.9 mm 16th brick package and achieves efficiency levels of 95% and better
Infineon Technologies broadens its EiceDRIVER™ portfolio with the new 24 V dual-channel low side gate driver with an…
Infineon Technologies broadens its EiceDRIVER™ portfolio with the new 24 V dual-channel low side gate driver with an integrated thermal pad
The new EiceDRIVER X3s offer active shutdown, short circuit clamping as well as either an active Miller Clamp or…
The new EiceDRIVER X3s offer active shutdown, short circuit clamping as well as either an active Miller Clamp or separate source and sink outputs
The dual MOSFET repetitive avalanche AEC-Q101 qualified devices are pre-tested for one billion cycles
The dual MOSFET repetitive avalanche AEC-Q101 qualified devices are pre-tested for one billion cycles
The 150V devices, featuring high safe operating areas and low RDS(ON)s, are aimed at challenging telecomm hot swap tasks
The 150V devices, featuring high safe operating areas and low RDS(ON)s, are aimed at challenging telecomm hot swap tasks
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family…
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family to contain two asymmetric…
The new surface mounted metal foil chip resistors (MFC) exploit metal foil on ceramic technology for enhanced performance
The new surface mounted metal foil chip resistors (MFC) exploit metal foil on ceramic technology for enhanced performance
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand 650V operating voltage…
Allegro MicroSystems announced the launch of the ACS37800, a Hall-effect power monitoring IC for single-phase AC and DC…
Allegro MicroSystems announced the launch of the ACS37800, a Hall-effect power monitoring IC for single-phase AC and DC solutions in a small PCB…
The MinE-CAP device reduces the input bulk capacitor size, reduces in-rush current by up to 95%, and eliminates NTC…
The MinE-CAP device reduces the input bulk capacitor size, reduces in-rush current by up to 95%, and eliminates NTC thermistors and associated…
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Pandemic or no Pandemic, 2020 was a big year for electrical engineering. Let’s look back at the products that defined…
Pandemic or no Pandemic, 2020 was a big year for electrical engineering. Let’s look back at the products that defined this year, and the…
The line between the nascent electric vehicle industry and the electronics world is getting ever more blurred, and…
The line between the nascent electric vehicle industry and the electronics world is getting ever more blurred, and nowhere is this more prevalent…
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
As electrification advances, the demand for compact, lightweight and robust electronic control substrates continues to grow.
As electrification advances, the demand for compact, lightweight and robust electronic control substrates continues to grow.
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in…
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and more reliable than currently…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…