The MinE-CAP device reduces the input bulk capacitor size, reduces in-rush current by up to 95%, and eliminates NTC thermistors and associated…
The MinE-CAP device reduces the input bulk capacitor size, reduces in-rush current by up to 95%, and eliminates NTC thermistors and associated…
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Pandemic or no Pandemic, 2020 was a big year for electrical engineering. Let’s look back at the products that defined…
Pandemic or no Pandemic, 2020 was a big year for electrical engineering. Let’s look back at the products that defined this year, and the…
The line between the nascent electric vehicle industry and the electronics world is getting ever more blurred, and…
The line between the nascent electric vehicle industry and the electronics world is getting ever more blurred, and nowhere is this more prevalent…
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
As electrification advances, the demand for compact, lightweight and robust electronic control substrates continues to grow.
As electrification advances, the demand for compact, lightweight and robust electronic control substrates continues to grow.
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in…
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and more reliable than currently…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by…
This gate driver provides separate output options together with active shutdown and short circuit clamping in DSO-8 300…
This gate driver provides separate output options together with active shutdown and short circuit clamping in DSO-8 300 mil package.
This article highlights NIC Components NCST-C series of current sensing SMT chip resistors utilizing low-cost thick film…
This article highlights NIC Components NCST-C series of current sensing SMT chip resistors utilizing low-cost thick film construction.
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving…
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving reliability.
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and…
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and 100% compliance with…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
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