Latest Wide Bandgap Articles

This article outlines how ROHM’s new current source gate driver – the BM60059FV-C – offers a possibility of…

This article outlines how ROHM’s new current source gate driver – the BM60059FV-C – offers a possibility of reducing switching losses by up…

Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as…

Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all…

Although range anxiety is disappearing from the short list of objections to EV adoption, it has been replaced by…

Although range anxiety is disappearing from the short list of objections to EV adoption, it has been replaced by recharging speed angst. For the…

Silicon Carbide (SiC) is poised to transform the global power electronics industry as it makes increasing inroads into…

Silicon Carbide (SiC) is poised to transform the global power electronics industry as it makes increasing inroads into the market share of legacy…

Short-circuit capability of power switches is a critical feature for all power systems, particularly those more…

Short-circuit capability of power switches is a critical feature for all power systems, particularly those more susceptible to experiencing short…

The continuing worldwide efforts to reduce carbon emissions have driven the growth in interest in electric vehicles (EV).…

The continuing worldwide efforts to reduce carbon emissions have driven the growth in interest in electric vehicles (EV). As a result, the demand…

Japanese electronic components manufacturer ROHM is forming a new joint venture to head its SiC power module business.

Japanese electronic components manufacturer ROHM is forming a new joint venture to head its SiC power module business.

Constant improvements in power semiconductor technology enable even more efficient and compact power converters. Silicon…

Constant improvements in power semiconductor technology enable even more efficient and compact power converters. Silicon Carbide CoolSiC™ MOSFETs…

High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC…

High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…

GaN product supplier Transphorm landed a $1.4 million contract with DARPA to explore alternative radio frequency…

GaN product supplier Transphorm landed a $1.4 million contract with DARPA to explore alternative radio frequency solutions using Nitrogen-polar on…

A new transistor, using photon manipulation instead of electronic signals, was created by an international research team…

A new transistor, using photon manipulation instead of electronic signals, was created by an international research team led by Skoltech and IBM.

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…

The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base…

The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…

Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many…

Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…

NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also…

NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…

Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.

Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.

The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.

The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.

Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build…

Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build and run a fabrication…

Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.

Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.