North Carolina-based power device manufacturer Cree is refreshing its brand identity and signing a new supply deal with GM.
North Carolina-based power device manufacturer Cree is refreshing its brand identity and signing a new supply deal with GM.
Japanese silicon-carbide wafer provider Showa Denko recently signed a pair of long-term supply agreements with ROHM and Toshiba.
Japanese silicon-carbide wafer provider Showa Denko recently signed a pair of long-term supply agreements with ROHM and Toshiba.
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its…
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its AI-based technology to areas…
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with…
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with SiC SBD in hybrid modules.…
GaN Systems announces its entry into a collaboration with EPowerlabs to deliver up a new converter, DDC48-1K, for use in…
GaN Systems announces its entry into a collaboration with EPowerlabs to deliver up a new converter, DDC48-1K, for use in mobility applications.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining…
GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The adoption of USBPD 3.0 and Type-C connectors is expected to standardize power adaptors across previously segmented…
The adoption of USBPD 3.0 and Type-C connectors is expected to standardize power adaptors across previously segmented electronic markets. Gone are…
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
PSU exceeds 80+ Titanium efficiency requirements and presents the highest power density solution at a lower cost than…
PSU exceeds 80+ Titanium efficiency requirements and presents the highest power density solution at a lower cost than traditional silicon solutions.
Junction temperature is directly related to system reliability. With TO packaged transistors, it was possible to add a…
Junction temperature is directly related to system reliability. With TO packaged transistors, it was possible to add a thermocouple to the case and…
The collaboration will see GaN Systems supply BMW Group with high-performance, automotive-grade GaN power transistors.
The collaboration will see GaN Systems supply BMW Group with high-performance, automotive-grade GaN power transistors.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental…
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental conditions while…
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