Latest Wide Bandgap Articles

The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base…

The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…

Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many…

Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…

NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also…

NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…

Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.

Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.

The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.

The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.

Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build…

Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build and run a fabrication…

Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.

Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.

North Carolina-based power device manufacturer Cree is refreshing its brand identity and signing a new supply deal with GM.

North Carolina-based power device manufacturer Cree is refreshing its brand identity and signing a new supply deal with GM.

Japanese silicon-carbide wafer provider Showa Denko recently signed a pair of long-term supply agreements with ROHM and Toshiba.

Japanese silicon-carbide wafer provider Showa Denko recently signed a pair of long-term supply agreements with ROHM and Toshiba.

The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.

The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.

Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its…

Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its AI-based technology to areas…

This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with…

This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with SiC SBD in hybrid modules.…

GaN Systems announces its entry into a collaboration with EPowerlabs to deliver up a new converter, DDC48-1K, for use in…

GaN Systems announces its entry into a collaboration with EPowerlabs to deliver up a new converter, DDC48-1K, for use in mobility applications.

Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.

Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.

The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.

The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.

The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.

The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.

ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.

ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.

GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining…

GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching…

The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…

The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.