Latest Wide Bandgap Articles

The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…

The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…

Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented…

Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented cut-off frequencies above 1MHz.…

The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…

The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…

With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will…

With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will look to develop 600 V…

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are…

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive…

Wolfspeed will manufacture its XM3 silicon carbide (SiC) modules at its just-opened 200 mm fab in upstate New York, the…

Wolfspeed will manufacture its XM3 silicon carbide (SiC) modules at its just-opened 200 mm fab in upstate New York, the largest in the world, for…

The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…

The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…

The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition…

The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…

The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…

The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ

The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.

The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.

The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…

The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.

The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.

The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.

The Lucid Air, MotorTrend’s Car of the Year for 2022, can pack up to 300 miles in just 22 minutes of charging.

The Lucid Air, MotorTrend’s Car of the Year for 2022, can pack up to 300 miles in just 22 minutes of charging.

Under the agreement, announced March 3, McLaren Applied will supply an E-motor and its IPG5 SiC inverter to BAK, for use…

Under the agreement, announced March 3, McLaren Applied will supply an E-motor and its IPG5 SiC inverter to BAK, for use in its new über-luxury…

Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250…

Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250 kW continuous for powering…

The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…

The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…

The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…

The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…

How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild…

How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild hybrid applications.