Latest Wide Bandgap Articles

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status…

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative…

ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices.…

ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices. Several applications in…

The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the…

The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…

The companies will look to combine Nexperia’s extensive background in gallium nitride (GaN) with Kyocera AVX’s…

The companies will look to combine Nexperia’s extensive background in gallium nitride (GaN) with Kyocera AVX’s expertise in advanced packaging…

(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN…

(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN is now widely used in…

The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices…

The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…

This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status…

This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status of silicon carbide (SiC)…

The companies will coordinate to develop Mitsubishi’s SiC power modules for use in the rail platforms offered by…

The companies will coordinate to develop Mitsubishi’s SiC power modules for use in the rail platforms offered by Siemens, such as its latest, the…

The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…

The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…

Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented…

Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented cut-off frequencies above 1MHz.…

The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…

The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…

With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will…

With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will look to develop 600 V…

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are…

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive…

Wolfspeed will manufacture its XM3 silicon carbide (SiC) modules at its just-opened 200 mm fab in upstate New York, the…

Wolfspeed will manufacture its XM3 silicon carbide (SiC) modules at its just-opened 200 mm fab in upstate New York, the largest in the world, for…

The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…

The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…

The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition…

The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…

The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…

The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ

The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.

The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.