EEPower

Latest Wide Bandgap Articles

Categories

Gallium Nitride and Silicon Carbide: Compound Materials for Radiation-Hardened Applications

Gallium Nitride and Silicon Carbide: Compound Materials for Radiation-Hardened Applications

For a long time, silicon-based devices have represented the baseline standard in the semiconductor landscape. Starting from 2007, due to Moore’s…


Traction-Inverter Development Platform Eases Road to Future Mobility

Traction-Inverter Development Platform Eases Road to Future Mobility

The momentum towards electrified mobility is gathering as governments commit to ending sales of petrol and diesel cars around the 2030 timeframe.…


Focusing on SiC Technology With WeEn Semi’s CEO

Focusing on SiC Technology With WeEn Semi’s CEO

Founded in Aug 2015, WeEn Semiconductors is committed to improving power conversion efficiency and providing superior power products for home…


CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

The International Conference on Integrated Power Electronics Systems (CIPS) focuses on the technological background, starting with the components…


EPC Adds Another Rad-hard Gallium Nitride Power FET

EPC Adds Another Rad-hard Gallium Nitride Power FET

The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…


SiC MOSFET Power Modules for Automotive Applications

SiC MOSFET Power Modules for Automotive Applications

Leapers Semiconductor, a developer and manufacturer of SiC power modules, has introduced its HPD series SiC power modules designed specifically for…


ST’s New Chip Could Save 15 Nuclear Plants Worth of Energy

ST’s New Chip Could Save 15 Nuclear Plants Worth of Energy

The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.


GaN Systems, EPC Both Unveil New GaN Power Transistors

GaN Systems, EPC Both Unveil New GaN Power Transistors

EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…


ROHM Establishes Global Application Center in India

ROHM Establishes Global Application Center in India

The company is expanding its state-of-the-art lab to cater to power applications of more than 10kW, and will hire dozens of local power electronics…


News Jun 17, 2022 by Gary Elinoff
Finding the Right Technology to Solve the Data Center Power Challenge

Finding the Right Technology to Solve the Data Center Power Challenge

Digitization and the rapid deployment of cloud services have boosted the growth of datacenters worldwide. Datacenters consume close to one percent…


Allegro to Acquire Heyday Integrated Circuits, Expand EV Reach

Allegro to Acquire Heyday Integrated Circuits, Expand EV Reach

The move bolsters and diversifies Allegro’s extant portfolio of voltage, current and power sensors, as well as drivers.


News Jun 08, 2022 by Gary Elinoff
Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…


EPC Says its New 40 V GaN FET Is World’s Smallest at 1.1 mΩ

EPC Says its New 40 V GaN FET Is World’s Smallest at 1.1 mΩ

The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…


GaN vs Silicon Smackdown

GaN vs Silicon Smackdown

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative…


SiC MOSFETs Push the Boundaries of Power Electronics

SiC MOSFETs Push the Boundaries of Power Electronics

ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices. Several applications in…


SiC MOSFET Enhances Stability Under Real Application Conditions

SiC MOSFET Enhances Stability Under Real Application Conditions

The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…


Nexperia and Kyocera AVX to Jointly Develop GaN Power Modules For EVs

Nexperia and Kyocera AVX to Jointly Develop GaN Power Modules For EVs

The companies will look to combine Nexperia’s extensive background in gallium nitride (GaN) with Kyocera AVX’s expertise in advanced packaging…


News May 25, 2022 by Gary Elinoff
GaN — Assuring Price, Volume and Security of Supply

GaN — Assuring Price, Volume and Security of Supply

(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN is now widely used in…


onsemi Says its 650 V SiC MOSFET is Market’s First in a TOLL Package

onsemi Says its 650 V SiC MOSFET is Market’s First in a TOLL Package

The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…


SiC Devices Used in PFC for EV Charger Applications

SiC Devices Used in PFC for EV Charger Applications

This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status of silicon carbide (SiC)…