High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
In this article, I’ll examine compact battery-charger integrated circuits (ICs) and solutions for ultrasound…
In this article, I’ll examine compact battery-charger integrated circuits (ICs) and solutions for ultrasound point-of-care products that are used…
NexWafe receives €39 million in funding to further develop its green solar wafer technology for large-scale production.
NexWafe receives €39 million in funding to further develop its green solar wafer technology for large-scale production.
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce…
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…
NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also…
NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…
Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.
Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build…
Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build and run a fabrication…
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting;…
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting; Hysteretic control…
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.
Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.
The increase of competitiveness, robustness and efficiency of future railway converters has demanded new power…
The increase of competitiveness, robustness and efficiency of future railway converters has demanded new power semiconductor modules. Converter…
North Carolina-based power device manufacturer Cree is refreshing its brand identity and signing a new supply deal with GM.
North Carolina-based power device manufacturer Cree is refreshing its brand identity and signing a new supply deal with GM.
Japanese silicon-carbide wafer provider Showa Denko recently signed a pair of long-term supply agreements with ROHM and Toshiba.
Japanese silicon-carbide wafer provider Showa Denko recently signed a pair of long-term supply agreements with ROHM and Toshiba.
The unit offers a 300mA battery charger, three independent power rails, and a separate LDO output.
The unit offers a 300mA battery charger, three independent power rails, and a separate LDO output.
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with…
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with SiC SBD in hybrid modules.…
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
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