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II-VI Inks a Three-Year Technology Access Agreement with GE Research

II-VI Inks a Three-Year Technology Access Agreement with GE Research

The technology access agreement (TAA) allows II-VI to gain access to GE’s wide-ranging silicon carbide (SiC) module technology and to its teams…


News Mar 01, 2022 by Gary Elinoff
Power Integrations Claims its New AEC-Q100 Qualified Switcher ICs Are First to Incorporate a SiC MOSFET

Power Integrations Claims its New AEC-Q100 Qualified Switcher ICs Are First to Incorporate a SiC MOSFET

The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.


ST’s Silicon-Carbide Power Devices for E-Mobility and Energy-Efficient Industry

ST’s Silicon-Carbide Power Devices for E-Mobility and Energy-Efficient Industry

ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…


Solitron Devices Announces 1200V, 100A Power Modules

Solitron Devices Announces 1200V, 100A Power Modules

Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge…


Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

Benefits of Using the 1700V and 3300V High Power Modules for Traction Applications

In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…


Collaboration on SiC Power Stack Reference Design

Collaboration on SiC Power Stack Reference Design

E-mobility and renewable energy systems require power management solutions that drive performance and cost efficiencies in addition to speeding up…


Wide Bandgap Devices for Automotive Applications

Wide Bandgap Devices for Automotive Applications

Learn about the applications of WBG based semiconductor devices specifically in automotive applications.


Applications of Wide Bandgap Devices

Applications of Wide Bandgap Devices

Some applications include string inverters, wind power, auxiliary power, hot swap technologies, traction inverters, EV charging and more.


SiC and GaN-based Wide Bandgap Devices for Power Conversion

SiC and GaN-based Wide Bandgap Devices for Power Conversion

Silicon has been the semiconductor material that has been used the most in power electronics applications. The maturity of the silicon…


Wide Bandgap Devices for Power Converters — Part 2

Wide Bandgap Devices for Power Converters — Part 2

This article will dissect the benefits of wide bandgap technologies for power converters.


Wide Bandgap Devices for Power Converters — Part 1

Wide Bandgap Devices for Power Converters — Part 1

This article will dive into the basics of wide bandgap materials and share an overview of SiC and GaN devices.


Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations

Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations

Knowing the power dissipation of a transistor is important to calculate the overall efficiency of the system and dimension the transistor’s…


Dual Linear Regulator for Digital IC Power Enables On-the-Fly Output Adjustment and Dynamic Headroom Optimization

Dual Linear Regulator for Digital IC Power Enables On-the-Fly Output Adjustment and Dynamic Headroom Optimization

Low dropout (LDO) linear regulators are often used to provide clean power to processor cores and communication circuits. In these applications, LDO…


How Lightweight 5G is Made Possible by GaN

How Lightweight 5G is Made Possible by GaN

With the launch of 5G, this next generation cellular network promises a trilogy of capabilities that will change how we approach wireless…


Using GaAs Diodes to Reduce Cost in High Power LLC Converters

Using GaAs Diodes to Reduce Cost in High Power LLC Converters

GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…


Driving SiC MOSFETs & IGBTs With Current Source Gate Driver

Driving SiC MOSFETs & IGBTs With Current Source Gate Driver

This article outlines how ROHM’s new current source gate driver – the BM60059FV-C – offers a possibility of reducing switching losses by up…


How to Empower Automotive DC Fast-Charging with Advanced Current Sensing

How to Empower Automotive DC Fast-Charging with Advanced Current Sensing

Although range anxiety is disappearing from the short list of objections to EV adoption, it has been replaced by recharging speed angst. For the…


Glitch-Free Voltage Supervisor ICs — a Concept or Reality?

Glitch-Free Voltage Supervisor ICs — a Concept or Reality?

A reliable supervisor IC is always an industry need as it adds system reliability and improves system performance over voltage transients and power…


Powering the Energy Transition with Silicon Carbide and Wide Band-Gap Devices

Powering the Energy Transition with Silicon Carbide and Wide Band-Gap Devices

Silicon Carbide (SiC) is poised to transform the global power electronics industry as it makes increasing inroads into the market share of legacy…


Moving from IGBT to SiC: PFC Efficiency

Moving from IGBT to SiC: PFC Efficiency

The continuing worldwide efforts to reduce carbon emissions have driven the growth in interest in electric vehicles (EV). As a result, the demand…