The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…
The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…
The ChiP (converter housed in package) fabrication facility will produce power modules in the United States using process…
The ChiP (converter housed in package) fabrication facility will produce power modules in the United States using process steps analogous to…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…
This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status…
This article analyzes the technological trends of the DC electric vehicle (EV) charger. It introduces the current status of silicon carbide (SiC)…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…
Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented…
Markets are expected to open up for sensors capable of delivering response times as low as 100ns and unprecedented cut-off frequencies above 1MHz.…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have…
Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have now succeeded in creating…
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250…
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250 kW continuous for powering…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
The technology access agreement (TAA) allows II-VI to gain access to GE’s wide-ranging silicon carbide (SiC) module…
The technology access agreement (TAA) allows II-VI to gain access to GE’s wide-ranging silicon carbide (SiC) module technology and to its teams…
The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.
The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
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