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Solid Power Releases Safety and Performance Data for its High-Content Silicon Cell

Solid Power Releases Safety and Performance Data for its High-Content Silicon Cell

Solid Power, a leading developer company of all-solid-state batteries, recently unveiled a report containing its new battery’s performance and…


News Nov 05, 2021 by Ahmad Ezzeddine
Si IGBT Modules for High-Frequency Operation

Si IGBT Modules for High-Frequency Operation

Several power conversion applications require operation at high switching frequencies (above 20kHz). This includes applications where optimizing…


Overviewing 4th Generation SiC MOSFETs and Application-level Support Tools

Overviewing 4th Generation SiC MOSFETs and Application-level Support Tools

High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…


CMOS implementation of XOR, XNOR, and TG gates

CMOS implementation of XOR, XNOR, and TG gates

Learn how to implement the logic gates XOR, XNOR, and Transmission Gate (TG) using CMOS.


NexWafe Raises Funds for its Low-Cost Green Silicon Wafer Technology

NexWafe Raises Funds for its Low-Cost Green Silicon Wafer Technology

NexWafe receives €39 million in funding to further develop its green solar wafer technology for large-scale production.


News Nov 01, 2021 by Stephanie Leonida
Toshiba Unveils New Simulation Technology Accu-ROM to Reduce Semiconductor Verification Time

Toshiba Unveils New Simulation Technology Accu-ROM to Reduce Semiconductor Verification Time

Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…


Transphorm Wins DARPA Contract

Transphorm Wins DARPA Contract

GaN product supplier Transphorm landed a $1.4 million contract with DARPA to explore alternative radio frequency solutions using Nitrogen-polar on…


News Oct 31, 2021 by Shannon Cuthrell
EPC Debuts a Bidirectional, 50W eGaN FET-based Buck-Boost Converter

EPC Debuts a Bidirectional, 50W eGaN FET-based Buck-Boost Converter

The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.


EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Basic CMOS Logic Gates

Basic CMOS Logic Gates

Learn about gates built with the CMOS digital-logic family.


40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors

Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors

Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…


NIST Researchers Develop a New Method to Detect Faulty Transistors on Chips

NIST Researchers Develop a New Method to Detect Faulty Transistors on Chips

NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…


News Oct 25, 2021 by Darshil Patel
Understanding the Importance of Power Electronics in Electrified Transportation

Understanding the Importance of Power Electronics in Electrified Transportation

Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.


STMicroelectronics’ Debuts Isolated Gate Driver Aimed at SiC MOSFETS

STMicroelectronics’ Debuts Isolated Gate Driver Aimed at SiC MOSFETS

The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.


Key Technologies for Applying the IoT to the Smart Grid

Key Technologies for Applying the IoT to the Smart Grid

Learn about the requirements for using the IoT with the smart grid and specific application areas.


University of Arkansas Receives Grant for New SiC-Based Semiconductor Fabrication Facility

University of Arkansas Receives Grant for New SiC-Based Semiconductor Fabrication Facility

Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build and run a fabrication…


News Oct 21, 2021 by Stephanie Leonida
ROHM’s New Dual MOSFETs Feature Withstand Voltages of 40 and 60 Volts

ROHM’s New Dual MOSFETs Feature Withstand Voltages of 40 and 60 Volts

The new series includes 8 dual n-channel devices and 4 units featuring one p-channel and one n-channel MOSFET each.


News Oct 21, 2021 by Gary Elinoff
Taiwan Semi Introduces 2A LED Driver with 4.5-75V Input

Taiwan Semi Introduces 2A LED Driver with 4.5-75V Input

AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting; Hysteretic control…


Infineon to Boost Investment in Semiconductor Technologies in the Year Ahead

Infineon to Boost Investment in Semiconductor Technologies in the Year Ahead

Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.


News Oct 19, 2021 by Shannon Cuthrell