EEPower

Latest Semiconductors Articles

Categories

How GaN FETs Have Become the Technology of Choice for Audiophiles

How GaN FETs Have Become the Technology of Choice for Audiophiles

Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all…


How to Empower Automotive DC Fast-Charging with Advanced Current Sensing

How to Empower Automotive DC Fast-Charging with Advanced Current Sensing

Although range anxiety is disappearing from the short list of objections to EV adoption, it has been replaced by recharging speed angst. For the…


Trench Schottky Rectifiers Reduce Trade-Offs and Deliver Increased Performance

Trench Schottky Rectifiers Reduce Trade-Offs and Deliver Increased Performance

Schottky diodes feature a low forward voltage drop and high switching speed suiting them to a wide variety of applications, such as a boost diode…


CMOS SR Latches and Flip-Flops

CMOS SR Latches and Flip-Flops

Learn how CMOS SR latch and flip-flop devices work.


Glitch-Free Voltage Supervisor ICs — a Concept or Reality?

Glitch-Free Voltage Supervisor ICs — a Concept or Reality?

A reliable supervisor IC is always an industry need as it adds system reliability and improves system performance over voltage transients and power…


Powering the Energy Transition with Silicon Carbide and Wide Band-Gap Devices

Powering the Energy Transition with Silicon Carbide and Wide Band-Gap Devices

Silicon Carbide (SiC) is poised to transform the global power electronics industry as it makes increasing inroads into the market share of legacy…


Delivering Higher Short-Circuit Capability for GaN FETs

Delivering Higher Short-Circuit Capability for GaN FETs

Short-circuit capability of power switches is a critical feature for all power systems, particularly those more susceptible to experiencing short…


Moving from IGBT to SiC: PFC Efficiency

Moving from IGBT to SiC: PFC Efficiency

The continuing worldwide efforts to reduce carbon emissions have driven the growth in interest in electric vehicles (EV). As a result, the demand…


ROHM Forms New Joint Venture for SiC Power Devices

ROHM Forms New Joint Venture for SiC Power Devices

Japanese electronic components manufacturer ROHM is forming a new joint venture to head its SiC power module business.


News Nov 09, 2021 by Shannon Cuthrell
Fast Short-Circuit Protection of SiC-MOSFETs through AC Current Sensors

Fast Short-Circuit Protection of SiC-MOSFETs through AC Current Sensors

Constant improvements in power semiconductor technology enable even more efficient and compact power converters. Silicon Carbide CoolSiC™ MOSFETs…


Solid Power Releases Safety and Performance Data for its High-Content Silicon Cell

Solid Power Releases Safety and Performance Data for its High-Content Silicon Cell

Solid Power, a leading developer company of all-solid-state batteries, recently unveiled a report containing its new battery’s performance and…


News Nov 05, 2021 by Ahmad Ezzeddine
Si IGBT Modules for High-Frequency Operation

Si IGBT Modules for High-Frequency Operation

Several power conversion applications require operation at high switching frequencies (above 20kHz). This includes applications where optimizing…


Overviewing 4th Generation SiC MOSFETs and Application-level Support Tools

Overviewing 4th Generation SiC MOSFETs and Application-level Support Tools

High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…


CMOS implementation of XOR, XNOR, and TG gates

CMOS implementation of XOR, XNOR, and TG gates

Learn how to implement the logic gates XOR, XNOR, and Transmission Gate (TG) using CMOS.


NexWafe Raises Funds for its Low-Cost Green Silicon Wafer Technology

NexWafe Raises Funds for its Low-Cost Green Silicon Wafer Technology

NexWafe receives €39 million in funding to further develop its green solar wafer technology for large-scale production.


News Nov 01, 2021 by Stephanie Leonida
Toshiba Unveils New Simulation Technology Accu-ROM to Reduce Semiconductor Verification Time

Toshiba Unveils New Simulation Technology Accu-ROM to Reduce Semiconductor Verification Time

Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…


Transphorm Wins DARPA Contract

Transphorm Wins DARPA Contract

GaN product supplier Transphorm landed a $1.4 million contract with DARPA to explore alternative radio frequency solutions using Nitrogen-polar on…


News Oct 31, 2021 by Shannon Cuthrell
EPC Debuts a Bidirectional, 50W eGaN FET-based Buck-Boost Converter

EPC Debuts a Bidirectional, 50W eGaN FET-based Buck-Boost Converter

The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.


EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Basic CMOS Logic Gates

Basic CMOS Logic Gates

Learn about gates built with the CMOS digital-logic family.