The continuing worldwide efforts to reduce carbon emissions have driven the growth in interest in electric vehicles (EV). As a result, the demand…
The continuing worldwide efforts to reduce carbon emissions have driven the growth in interest in electric vehicles (EV). As a result, the demand…
Japanese electronic components manufacturer ROHM is forming a new joint venture to head its SiC power module business.
Japanese electronic components manufacturer ROHM is forming a new joint venture to head its SiC power module business.
Constant improvements in power semiconductor technology enable even more efficient and compact power converters. Silicon…
Constant improvements in power semiconductor technology enable even more efficient and compact power converters. Silicon Carbide CoolSiC™ MOSFETs…
Solid Power, a leading developer company of all-solid-state batteries, recently unveiled a report containing its new…
Solid Power, a leading developer company of all-solid-state batteries, recently unveiled a report containing its new battery’s performance and…
Several power conversion applications require operation at high switching frequencies (above 20kHz). This includes…
Several power conversion applications require operation at high switching frequencies (above 20kHz). This includes applications where optimizing…
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC…
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…
Learn how to implement the logic gates XOR, XNOR, and Transmission Gate (TG) using CMOS.
Learn how to implement the logic gates XOR, XNOR, and Transmission Gate (TG) using CMOS.
NexWafe receives €39 million in funding to further develop its green solar wafer technology for large-scale production.
NexWafe receives €39 million in funding to further develop its green solar wafer technology for large-scale production.
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce…
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…
GaN product supplier Transphorm landed a $1.4 million contract with DARPA to explore alternative radio frequency…
GaN product supplier Transphorm landed a $1.4 million contract with DARPA to explore alternative radio frequency solutions using Nitrogen-polar on…
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
Learn about gates built with the CMOS digital-logic family.
Learn about gates built with the CMOS digital-logic family.
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many…
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…
NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also…
NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…
Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.
Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
Learn about the requirements for using the IoT with the smart grid and specific application areas.
Learn about the requirements for using the IoT with the smart grid and specific application areas.
Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build…
Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build and run a fabrication…
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