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An On-demand Solar Energy to Electricity Converter Chip

An On-demand Solar Energy to Electricity Converter Chip

Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have now succeeded in creating…


News Apr 15, 2022 by Darshil Patel
EPC Claims its New 350 V GaN Transistor is 20 Times Smaller than Comparable Silicon Offerings

EPC Claims its New 350 V GaN Transistor is 20 Times Smaller than Comparable Silicon Offerings

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ


Littelfuse’s New Series of Thyristors Guard Against Severe Voltage Transients

Littelfuse’s New Series of Thyristors Guard Against Severe Voltage Transients

The SIDACtor series from Littelfuse will provide protection for exposed interfaces in industrial and information communications technology (ICT)…


ROHM’s New QuiCur Technology Improves Load Transient Responses for DC/DC Converter ICs and LDOs

ROHM’s New QuiCur Technology Improves Load Transient Responses for DC/DC Converter ICs and LDOs

QuiCur, announced March 24, heralds improvements in both response speed and in voltage output stability.


News Apr 06, 2022 by Gary Elinoff
NIC Components Unveils a New Series of Aluminum Electrolytic Capacitors

NIC Components Unveils a New Series of Aluminum Electrolytic Capacitors

The surface-mounted devices are available with capacitances of 47 to 10,000 µF and voltage ratings from 6.3 to 100 VDC.


STMicroelectronics Debuts 50 W GaN Converter for High-efficiency Power Applications

STMicroelectronics Debuts 50 W GaN Converter for High-efficiency Power Applications

The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.


ROHM Introduces 150 V GaN High Electron Mobility Transistor with an 8 V Withstand Gate Voltage

ROHM Introduces 150 V GaN High Electron Mobility Transistor with an 8 V Withstand Gate Voltage

The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.


Microchip Expands its Silicon Carbide Power Portfolio with New 3.3 kV MOSFETs and Schottky Barrier Diodes

Microchip Expands its Silicon Carbide Power Portfolio with New 3.3 kV MOSFETs and Schottky Barrier Diodes

The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.


Texas Instruments Claims its New Low-dropout (LDO) Regulator Features Industry-low Noise Level

Texas Instruments Claims its New Low-dropout (LDO) Regulator Features Industry-low Noise Level

The regulator features a noise level of only 0.46 µVRMS, with exceptionally high power-supply ripple rejection (PSRR).


Infineon Introduces New CoolSiC MOSFET and 2EDN Gate Driver Families

Infineon Introduces New CoolSiC MOSFET and 2EDN Gate Driver Families

The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.


Addressing the Efficiency Challenge for Cable-Free Charging

Addressing the Efficiency Challenge for Cable-Free Charging

Advances in component technology, together with the emergence of novel new architectures, hold the key to taking wireless charging beyond phone…


Power Integrations Introduces Tandem Power IC Families at APEC

Power Integrations Introduces Tandem Power IC Families at APEC

The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).


Littelfuse Claims Its New Fuses Are the First Automotive-grade 1000 VDC Offerings on the Market

Littelfuse Claims Its New Fuses Are the First Automotive-grade 1000 VDC Offerings on the Market

The new fuses are aimed specifically at the harsh automotive environments of modern electric vehicles (EVs), where they have been designed to…


STMicroelectronics Releases a Series of Nine Economical Radiation-Hardened ICs Aimed at New Space

STMicroelectronics Releases a Series of Nine Economical Radiation-Hardened ICs Aimed at New Space

The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.


Lucid’s New Luxury EV Has an Incredibly Fast Charger, and It’s Driven by ROHM’s SiC MOSFETs

Lucid’s New Luxury EV Has an Incredibly Fast Charger, and It’s Driven by ROHM’s SiC MOSFETs

The Lucid Air, MotorTrend’s Car of the Year for 2022, can pack up to 300 miles in just 22 minutes of charging.


News Mar 21, 2022 by Ian Hahn
BAK Motors Selects McLaren Applied’s 800 V SiC Inverter For Its Solid-state Hydrogen Hybrid Hyper-car

BAK Motors Selects McLaren Applied’s 800 V SiC Inverter For Its Solid-state Hydrogen Hybrid Hyper-car

Under the agreement, announced March 3, McLaren Applied will supply an E-motor and its IPG5 SiC inverter to BAK, for use in its new über-luxury…


News Mar 18, 2022 by Ian Hahn
Alpha and Omega Debuts Two New 600 V Super Junction MOSFETs Featuring RDS(ON)s of 110 and 140 mΩ

Alpha and Omega Debuts Two New 600 V Super Junction MOSFETs Featuring RDS(ON)s of 110 and 140 mΩ

Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s demands for high efficiency and…


McLaren Applied Unveils the Production Intent Design of its Racing-inspired 800 V Silicon Carbide Inverter

McLaren Applied Unveils the Production Intent Design of its Racing-inspired 800 V Silicon Carbide Inverter

Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250 kW continuous for powering…


News Mar 15, 2022 by Gary Elinoff
Kyocera AVX Acquires ROHM’s Entire Tantalum and Polymer Capacitor Line

Kyocera AVX Acquires ROHM’s Entire Tantalum and Polymer Capacitor Line

The final agreement calls for ROHM to transfer all relevant intellectual property and manufacturing assets to Kyocera AVX by August 5, 2022.


News Mar 09, 2022 by Gary Elinoff
Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…