The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The regulator features a noise level of only 0.46 µVRMS, with exceptionally high power-supply ripple rejection (PSRR).
The regulator features a noise level of only 0.46 µVRMS, with exceptionally high power-supply ripple rejection (PSRR).
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
Advances in component technology, together with the emergence of novel new architectures, hold the key to taking wireless…
Advances in component technology, together with the emergence of novel new architectures, hold the key to taking wireless charging beyond phone…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
The new fuses are aimed specifically at the harsh automotive environments of modern electric vehicles (EVs), where they…
The new fuses are aimed specifically at the harsh automotive environments of modern electric vehicles (EVs), where they have been designed to…
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s…
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s demands for high efficiency and…
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250…
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250 kW continuous for powering…
The final agreement calls for ROHM to transfer all relevant intellectual property and manufacturing assets to Kyocera AVX…
The final agreement calls for ROHM to transfer all relevant intellectual property and manufacturing assets to Kyocera AVX by August 5, 2022.
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
The AOZ32034AQV from Alpha and Omega Semiconductor is a highly integrated half-bridge power stage that lowers both the…
The AOZ32034AQV from Alpha and Omega Semiconductor is a highly integrated half-bridge power stage that lowers both the BOM and design time for…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
Kyocera AVX in February added a new 470 µF/125V code to its TWA-Y series, COTS-Plus line of high-temperature,…
Kyocera AVX in February added a new 470 µF/125V code to its TWA-Y series, COTS-Plus line of high-temperature, long-living capacitors.
The controller, when paired with a P-channel MOSFET configured as an ideal diode, provides the high-side rail isolation…
The controller, when paired with a P-channel MOSFET configured as an ideal diode, provides the high-side rail isolation needed for reverse current…
Both new devices from STMicroelectronics (ST) feature programmable drive-current limits to accommodate a wide range of…
Both new devices from STMicroelectronics (ST) feature programmable drive-current limits to accommodate a wide range of load requirements.
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