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ROHM and Delta Electronics Announce GaN-focused Strategic Partnership

ROHM and Delta Electronics Announce GaN-focused Strategic Partnership

With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will look to develop 600 V…


News May 03, 2022 by Gary Elinoff
GaN ePower Integrated Circuits Applied to Motor Drives

GaN ePower Integrated Circuits Applied to Motor Drives

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive…


EPC Space Unveils New 40 V Rad-Hard GaN Power Transistor

EPC Space Unveils New 40 V Rad-Hard GaN Power Transistor

The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.


An On-demand Solar Energy to Electricity Converter Chip

An On-demand Solar Energy to Electricity Converter Chip

Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have now succeeded in creating…


News Apr 15, 2022 by Darshil Patel
EPC Claims its New 350 V GaN Transistor is 20 Times Smaller than Comparable Silicon Offerings

EPC Claims its New 350 V GaN Transistor is 20 Times Smaller than Comparable Silicon Offerings

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ


STMicroelectronics Debuts 50 W GaN Converter for High-efficiency Power Applications

STMicroelectronics Debuts 50 W GaN Converter for High-efficiency Power Applications

The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.


ROHM Introduces 150 V GaN High Electron Mobility Transistor with an 8 V Withstand Gate Voltage

ROHM Introduces 150 V GaN High Electron Mobility Transistor with an 8 V Withstand Gate Voltage

The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.


Power Integrations Introduces Tandem Power IC Families at APEC

Power Integrations Introduces Tandem Power IC Families at APEC

The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).


Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…


Teledyne e2v HiRel Releases a 100 V Transistor Driver for 20 MHz FET and GaN Transistors

Teledyne e2v HiRel Releases a 100 V Transistor Driver for 20 MHz FET and GaN Transistors

The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…


High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild hybrid applications.


EPC Space Expands its Rad-Hard GaN Offerings With New Demo Boards

EPC Space Expands its Rad-Hard GaN Offerings With New Demo Boards

The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…


Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful…


hofer powertrain and VisIC Technologies develop 3-Level 800V GaN inverter

hofer powertrain and VisIC Technologies develop 3-Level 800V GaN inverter

hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global leader in gallium nitride…


Innoscience Places Big Bet on GaN-on-Si

Innoscience Places Big Bet on GaN-on-Si

Innoscience Technology is hoping to make big waves in the Gallium Nitride (GaN) industry by fabricating 200mm (8") GaN-on-Si wafers and…


News Feb 06, 2022 by Dale Wilson
Wide Bandgap Devices for Automotive Applications

Wide Bandgap Devices for Automotive Applications

Learn about the applications of WBG based semiconductor devices specifically in automotive applications.


Applications of Wide Bandgap Devices

Applications of Wide Bandgap Devices

Some applications include string inverters, wind power, auxiliary power, hot swap technologies, traction inverters, EV charging and more.


SiC and GaN-based Wide Bandgap Devices for Power Conversion

SiC and GaN-based Wide Bandgap Devices for Power Conversion

Silicon has been the semiconductor material that has been used the most in power electronics applications. The maturity of the silicon…


Wide Bandgap Devices for Power Converters — Part 2

Wide Bandgap Devices for Power Converters — Part 2

This article will dissect the benefits of wide bandgap technologies for power converters.


Wide Bandgap Devices for Power Converters — Part 1

Wide Bandgap Devices for Power Converters — Part 1

This article will dive into the basics of wide bandgap materials and share an overview of SiC and GaN devices.