SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful attention must be paid to the…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful attention must be paid to the…
Littelfuse, Nexperia, and Vishay have released diode products that provide designers with upgraded features.
Littelfuse, Nexperia, and Vishay have released diode products that provide designers with upgraded features.
Learn the evolution of Plastic Optic Fiber (POF) technology—from its origins, to its role as an ideal solution for use…
Learn the evolution of Plastic Optic Fiber (POF) technology—from its origins, to its role as an ideal solution for use in 21st century Smart Grids.
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad GaN compatibility.
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density…
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density and high-speed switching.
The family brings 18-channel monitoring and SPI-to-TPL bridge to electric vehicle and energy storage applications.
The family brings 18-channel monitoring and SPI-to-TPL bridge to electric vehicle and energy storage applications.
Announced today, Ideal Semiconductor is beginning full production of its proprietary silicon MOSFETs. EEPower met with…
Announced today, Ideal Semiconductor is beginning full production of its proprietary silicon MOSFETs. EEPower met with the company's leaders,…
The FLXPro Series offers a digitally configurable AC-DC power supply with high power density and modular outputs.
The FLXPro Series offers a digitally configurable AC-DC power supply with high power density and modular outputs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
GaN devices in TOLL packages boost solar inverter efficiency and compactness. Learn how this technology provides great…
GaN devices in TOLL packages boost solar inverter efficiency and compactness. Learn how this technology provides great thermal performance, low…
EPC9196 brings high-speed, medium-voltage BLDC drive capability to compact platforms.
EPC9196 brings high-speed, medium-voltage BLDC drive capability to compact platforms.
Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.
Learn how 100 V GaN devices are serving the needs of 48 V applications in data centers, renewable energy, and motor drives.
South Korean researchers have developed a battery tech that dramatically improves energy density and could enable…
South Korean researchers have developed a battery tech that dramatically improves energy density and could enable electric vehicles to travel up to…
Toshiba’s new device structures aim to boost efficiency and reliability in high-temperature power conversion systems.
Toshiba’s new device structures aim to boost efficiency and reliability in high-temperature power conversion systems.
STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.
STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.
The companies will develop an entirely novel power architecture for future AI data centers.
The companies will develop an entirely novel power architecture for future AI data centers.
The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.
The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV…
Silicon Carbide (SiC) has a 3x bandgap compared to silicon. Learn how unipolar devices like MOSETs in the several kV range are possible with SiC.
TDK, Littelfuse, and Novosense have released components targeting scalability, thermal resilience, and EMI issues.
TDK, Littelfuse, and Novosense have released components targeting scalability, thermal resilience, and EMI issues.
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