The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for ultra-thin laptops, displays,…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for ultra-thin laptops, displays,…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.
EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.
STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon…
STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds…
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a…
Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip…
Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the…
Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the product portfolio in the…
Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers…
Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
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