EPC’s Newest 100V eGaN FET Family Outclasses Classical Silicon MOSFETs

EPC introduces the EPC2218 and EPC2204 100V eGaN FETs. These devices are the two newest members of its enhanced mode gallium nitride on silicon (eGAN) family of MOSFET replacements. 

 

Modified Image courtesy of EPC

 

The EPC2218 and the EPC2204 sport RDS(ON)’s of 3.2 and 6 mΩ, respectively, representing an almost 20% improvement when compared to prior generation eGaN FET products. In the image below, the EPC2204 is compared legacy MOSFETS, and the stark results are noteworthy for engineers involved in power system design.

 

Image courtesy of EPC

 

Despite a 66% decrease in size, maximum RDS(ON) is improved by 64%. There is also a better than 50% improvement in gate charge (QG). Most significantly, as is true for all eGaN FETs, there is no reverse recovery charge (QRR) at all. This later fact enables greater efficiencies for motor drives and synchronous rectifiers.

It is the extremely high electron mobility and low temperature coefficient of GaN that enables these units to offer its very low RDS(on). The very low QG and lack of any QRR result from their majority carrier diodes and lateral structure.

These new eGAN FETs are part of an expanding group of components. We recently covered the EPC2215 and the EPC2207, which are 200 volt devices.

Alex Lidow, EPC’s co-founder and CEO commented, “With the clear superiority of these new 100 V eGaN FETs, one might expect them to be priced at a premium.  However, EPC has priced these state-of-the-art 100 V transistors comparable with their aging ancestor, the silicon power MOSFET. Designers can take advantage of devices that are higher performance, smaller, more thermally efficient, and at a comparable cost. The displacement of the power MOSFET with GaN devices continues to accelerate.” 

 

Operating Parameters

The EPC2218 and the EPC2204 both feature these maximum ratings 

• Drain to source (VDS) 100 volts continuous and 120 volts pulsed. 
• Gate-to-source (VGS) -4 to +6 volts

 

Maximums for the EPC2204

• Continuous Drain Current: 29 Amps
• Pulsed Drain Current: 115 Amps
• Thermal Resistance, Junction-to-Case: 1.0℃/Watt
• Thermal Resistance, Junction-to-Board: 2.5℃/Watt

 

Maximums for the EPC2218

• Continuous Drain Current: 60 amps
• Pulsed Drain Current: 231 amps
• Thermal Resistance, Junction-to-Case: 0.5℃/Watt
• Thermal Resistance, Junction-to-Board: 1.4℃/Watt

 

Applications

Other application for these devices include:

• Isolated and non-isolated DC converters
• USB-C applications
• LED Lighting
• E-Mobility

 

Physical Characteristics

Both units operate over a -40 to +150℃ temperature range. 

They are exclusively supplied in passivated die form with solder bars. Die Size are 3.5 x 1.95 mm and 2.5 x 1.5 mm for the EPC2218 and the EPC2204, respectively. 

All units are halogen free, and lead free with RoHS certification.

 

Getting to Market Faster

EPC offers the EPC9097 and EPC90123 development boards for the EPC2204 and EPC2218, respectively. Both boards measure 2 x 2 inches, and either can form the basis of prototype, with EPC explaining the process in this video.

 

The EPC9097 development board. Image courtesy of EPC

 

About EPC

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, automotive, power inverters, remote imaging and sensing technology (Lidar), and Class-D audio amplifiers. 

EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.