Toshiba Launches 1200V Silicon Carbide (SiC) MOSFET

Toshiba Electronics Europe GmbH (“Toshiba") has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications including 400V AC input AC-DC power supplies, Photovoltaic (PV) inverters and bi-directional DC-DC converters for uninterruptible power supplies (UPS).

 

 

The new TW070J120B power MOSFET is based upon SiC, a new wide bandgap material that allows devices to deliver high voltage resistance, high-speed switching, and low On-resistance when compared to conventional MOSFETs and insulated gate bipolar transistor (IGBT) products based upon silicon (Si). As a result, the new MOSFET will make a significant contribution to reduced power consumption and improved power density, leading to opportunities for system downsizing.

Fabricated with Toshiba’s second-generation chip design[1], the new SiC MOSFET offers enhanced reliability. Additionally, the TW070J120B realizes low input capacitance (CISS) of 1680pF (typ.), a low gate-input charge (Qg) of 67nC (typ.), and a drain-to-source On-resistance (RDS(ON)) of just 70mΩ (typ.).

When compared with a 1200V silicon IGBT such as Toshiba’s GT40QR21, the new device reduces turn-Off switching loss by approximately 80% and switching time (fall time) by around 70%, while delivering low On-voltage characteristics with a drain current (ID) of up to 20A.

The gate threshold voltage (Vth) is set high (in the range 4.2V to 5.8V), which reduces the possibility of unintended or spurious turn On or Off. Furthermore, incorporation of a SiC Schottky barrier diode (SBD) with a low forward voltage (VDSF) of just -1.35V (typ.) also helps to reduce losses.

Housed in a TO-3P(N) package, the new TW070J120B MOSFET will enable the design of higher efficiency power solutions, especially in industrial applications, where the increased power density will also contribute to reduced equipment size and weight.

Shipments of the new device start today.

 

About Toshiba Electronics Europe

Toshiba Electronics Europe (TEE) is the European electronic components business of Toshiba Corporation, which is ranked among the world’s largest semiconductor vendors. TEE offers one of the industry‘s broadest IC and discrete product lines including high-end memory, microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products like HDDs, SSDs, SD Cards and USB sticks. TEE was formed in 1973 in Neuss, Germany, providing design, manufacturing, marketing and sales and now has headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom. TEE employs approximately 300 people in Europe. Company president is Mr. Takashi Nagasawa. Toshiba Corporation is a world-leading diversified manufacturer, solutions provider and marketer of advanced electronic and electrical products and systems. Toshiba Group brings innovation and imagination to a wide range of businesses: digital products, including LCD TVs, notebook PCs, retail solutions and MFPs; electronic devices, including semiconductors, storage products and materials; industrial and social infrastructure systems, including power generation systems, smart community solutions, medical systems and escalators & elevators; and home appliances. Toshiba was founded in 1875, and today operates a global network of more than 590 consolidated companies, with 206,000 employees worldwide and annual sales surpassing US$61 billion.