Latest Semiconductors New Products

This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT…

This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT synchronous rectification

Infineon Technologies 650 V CoolMOS™ CFD7 product family for SMPS designs in industrial applications recent…

Infineon Technologies 650 V CoolMOS™ CFD7 product family for SMPS designs in industrial applications recent technology trends include the need…

EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.

EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.

STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon…

STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…

Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection…

Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection using the best-in-class low…

Alpha and Omega Semiconductor announced a new series of DrMOS targeting multiphase VR regulators powering…

Alpha and Omega Semiconductor announced a new series of DrMOS targeting multiphase VR regulators powering high-performance GPU and memory in…

EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio,…

EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.

The TDTTP4000W065AN employs bridgeless totem-pole power factor correction topology with traditional analog control.

The TDTTP4000W065AN employs bridgeless totem-pole power factor correction topology with traditional analog control.

These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.

These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.

Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a…

Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip…

Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the…

Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the product portfolio in the…

Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers…

Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from…

Energous Corporation announced a new module that integrates components provided by Dialog Semiconductor in a strategic…

Energous Corporation announced a new module that integrates components provided by Dialog Semiconductor in a strategic partnership to create a…

Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented…

Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…

The evaluation board integrates a 3-phase rectifier EMI filter, current sensors, and protection features as well as…

The evaluation board integrates a 3-phase rectifier EMI filter, current sensors, and protection features as well as thermal management and heatsink.

Mitsubishi Electric Corporation announced the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT)…

Mitsubishi Electric Corporation announced the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT) module for industrial uses.

The EPC2215 and EPC2207 sport typical RDS(ON) ’s of 6 mΩ and 22 mΩ, respectively

The EPC2215 and EPC2207 sport typical RDS(ON) ’s of 6 mΩ and 22 mΩ, respectively

AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes

AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes

This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…

This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…