Latest Semiconductors New Products

This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and…

This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications

This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um…

This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…

The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.

The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.

This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.

This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.

This article highlights ceramic YAG (yttrium aluminum garnet) platform for solid-state lasers and optical components.

This article highlights ceramic YAG (yttrium aluminum garnet) platform for solid-state lasers and optical components.

Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).

Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).

This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology,…

This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…

The EVALSTPM-3PHISO provides galvanic isolation and meets tough international accuracy and quality standards.

The EVALSTPM-3PHISO provides galvanic isolation and meets tough international accuracy and quality standards.

To meet a variety of design requirements, the rotary DIP switch models offer multiple termination types, including…

To meet a variety of design requirements, the rotary DIP switch models offer multiple termination types, including gull-wing, angled gull wing, and…

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of…

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and…

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…

The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices

The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.

The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including…

The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC…

The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon

The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon

The new units feature either four or two channels with 14-bit resolution at up to 0.5 GS/s and 16 digital channels

The new units feature either four or two channels with 14-bit resolution at up to 0.5 GS/s and 16 digital channels