Infineon Technologies AG adds a device to its cost-effective and compact-size EiceDRIVER™ 1EDN TDI (truly differential inputs) 1-channel…
Infineon Technologies AG adds a device to its cost-effective and compact-size EiceDRIVER™ 1EDN TDI (truly differential inputs) 1-channel…
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power…
By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power Integrations delivers a…
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from…
Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from Wolfspeed, a Cree Company.
Toshiba Electronics Europe announced its new IGBT/MOSFET gate driver with additional built-in functionality.
Toshiba Electronics Europe announced its new IGBT/MOSFET gate driver with additional built-in functionality.
USB-C is rapidly becoming established as a replacement for Micro-B or Mini-B plugs, for both power and data connections,…
USB-C is rapidly becoming established as a replacement for Micro-B or Mini-B plugs, for both power and data connections, as it offers the…
The new 90 W PoE portfolio more than doubles standard PoE power and expands the capabilities of wireless access points…
The new 90 W PoE portfolio more than doubles standard PoE power and expands the capabilities of wireless access points and IoT wireless gateways.
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