New Industry Products

9A Low Side Silicon Carbide MOSFET and IGBT Driver

April 02, 2020 by Paul Shepard

The IX4351NE from Littelfuse is designed specifically to drive silicon carbide MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.

The IX4351NE is designed for driving SiC MOSFETs and IGBTs in on-board chargers and dc charging stations, industrial inverters, power factor correction circuits, ac-dc power supplies and dc-dc converters.

Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage.

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IX4351 functional block diagram.

Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.

Summary of Features

  • Separate 9A peak source and sink outputs
  • Operating Voltage Range: -10V to +25V
  • Internal negative charge pump regulator for selectable negative gate drive bias
  • Desaturation detection with soft shutdown sink driver
  • TTL and CMOS compatible input
  • Under Voltage lockout (UVLO)
  • Thermal shutdown
  • Open drain FAULT output

The IX4351NE is rated for operational temperature range of -40°C to +125°C, and is available in a thermally enhanced 16-pin power SOIC package.