The new chip enables wireless charging to take place almost as quickly as charging via cable
The new chip enables wireless charging to take place almost as quickly as charging via cable
Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules…
Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules (IPMs) to simplify HVAC…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or…
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or decreasing operating…
The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide…
The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide MPS diodes.
Silicon to Software company Synopsys has released a new virtual prototyping solution designed to accelerate the…
Silicon to Software company Synopsys has released a new virtual prototyping solution designed to accelerate the development of power electronics…
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are…
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are equipped with enable, power…
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.
New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.
This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.
This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.
Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of…
Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of power while decreasing…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…
The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications,…
The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications, from electric seat control…
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
The CoolMOS CFD7 looks to answer the call for higher bus voltages as well as for greater efficiency and power density.
The CoolMOS CFD7 looks to answer the call for higher bus voltages as well as for greater efficiency and power density.
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