Latest Semiconductors & ICs New Products

The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide…

The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide MPS diodes.

Silicon to Software company Synopsys has released a new virtual prototyping solution designed to accelerate the…

Silicon to Software company Synopsys has released a new virtual prototyping solution designed to accelerate the development of power electronics…

This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.

This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.

The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are…

The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are equipped with enable, power…

Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.

Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.

Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…

Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…

GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.

GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.

New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.

New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.

This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion. 

This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion. 

Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of…

Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of power while decreasing…

This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…

This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…

This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…

This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…

The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications,…

The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications, from electric seat control…

Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.

Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.

The CoolMOS CFD7 looks to answer the call for higher bus voltages as well as for greater efficiency and power density.

The CoolMOS CFD7 looks to answer the call for higher bus voltages as well as for greater efficiency and power density.

The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W

The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W

Fugi has added two 50 watt and two 75 watt devices to it’s 7th-Generation X-Series Portfolio.

Fugi has added two 50 watt and two 75 watt devices to it’s 7th-Generation X-Series Portfolio.

The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace

The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace

Advanced Linear Devices Inc. features SABMBOVP family an ideal clamping solution for critical mission applications…

Advanced Linear Devices Inc. features SABMBOVP family an ideal clamping solution for critical mission applications deployed in business, safety,…