EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.
EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.
The new ICs reduce design complexity while delivering the high measurement accuracy for systems charged with the…
The new ICs reduce design complexity while delivering the high measurement accuracy for systems charged with the protection of cold-chain assets.
The TDTTP4000W065AN employs bridgeless totem-pole power factor correction topology with traditional analog control.
The TDTTP4000W065AN employs bridgeless totem-pole power factor correction topology with traditional analog control.
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
This article highlights Ricoh Electronics R1801 Buck DC/DC Converter, designed for use in the Internet of Things…
This article highlights Ricoh Electronics R1801 Buck DC/DC Converter, designed for use in the Internet of Things ecosystem by extracting energy…
Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a…
Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip…
Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the…
Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the product portfolio in the…
This article highlights Bel Fuse's 0685P Series of surface mount fast-acting chip fuses with high inrush current…
This article highlights Bel Fuse's 0685P Series of surface mount fast-acting chip fuses with high inrush current withstand capability in a…
Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers…
Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from…
Energous Corporation announced a new module that integrates components provided by Dialog Semiconductor in a strategic…
Energous Corporation announced a new module that integrates components provided by Dialog Semiconductor in a strategic partnership to create a…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…
The evaluation board integrates a 3-phase rectifier EMI filter, current sensors, and protection features as well as…
The evaluation board integrates a 3-phase rectifier EMI filter, current sensors, and protection features as well as thermal management and heatsink.
Mitsubishi Electric Corporation announced the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT)…
Mitsubishi Electric Corporation announced the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT) module for industrial uses.
In this month’s capacitor product recap we take a look at transistors from Kemet, Vishay, and Cornell Dubilier.
In this month’s capacitor product recap we take a look at transistors from Kemet, Vishay, and Cornell Dubilier.
The EPC2215 and EPC2207 sport typical RDS(ON) ’s of 6 mΩ and 22 mΩ, respectively
The EPC2215 and EPC2207 sport typical RDS(ON) ’s of 6 mΩ and 22 mΩ, respectively
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
Alpha and Omega Semiconductor Limited (AOS) AONS32310, a 30V MOSFET with low on-resistance and a high Safe Operating Area…
Alpha and Omega Semiconductor Limited (AOS) AONS32310, a 30V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability which is…
This article highlights Taiwan Semiconductor's TSCR4 family of linear CMOS LED driver ICs that provide a much improved…
This article highlights Taiwan Semiconductor's TSCR4 family of linear CMOS LED driver ICs that provide a much improved performance drop-in…
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
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