Infineon’s New 650V MOSFETs Target SMPS Applications
The CoolMOS CFD7 looks to answer the call for higher bus voltages as well as for greater efficiency and power density.
Infineon has added new 650 volt versions to its existing 600 Volt CoolMOS™ SJ MOSFET CFD7 family. The new devices, targeted at soft switching applications, offer improved switching performance, excellent thermal behavior, an integrated fast body diode as well as an additional 50 volts of breakdown voltage.
Image used courtesy of Infineon
The CFD7 family is the successor to Infineon’s CoolMOS™ SJ MOSFET CFD2, and are part of Infineon’s fast body diode group. There are six new members of the CFD7 family, and all feature a body diode diF/dt of 1300 A/µs.
Due to their improved switching capabilities and thermal behavior, new CFD7 offer excellent performance in technologies such the zero voltage switched phase-shifted full-bridge. They feature very low values for QRR and for RDS(on), with the latter showing little variation over temperature.
There’s Still a Place for Power MOSFETs
While low bandgap power semiconductors, such as silicon carbide (SiC) and Gallium Nitride (GaN) are getting all the publicity these days, they may not be the best choice for all use cases. In the image below, Infineon charts the best use-case position for the 650 volt CFD7 family.
Modified image used courtesy of Infineon
As Petschnig Edgar points out his article for Infineon, the yellow bubble indicates where the Infineon devices show the best efficacy; switching speeds of approximately 10 to 500 kHz and from about 2 to 50 kilowatts. It’s only if the design calls for more power or faster switching speed that SiC or GaN, respectively, might be a better choice.
Breaking Down the New CFD7 Family Members
In TO-220 Packages, there are the IPP65R041CFD7 and the IPP65R060CFD7
|RDS(ON) (max)||41 mΩ||60 mΩ|
|Qgate (typ) Total||102 nanocoulombs||68 nanocoulombs|
|QRR (typ)||1.2 microcoulombs||0.86 microcoulombs|
|Body diode diF/dt||1300 A/µs||1300 A/µs|
|Continuous Drain Current||50 amps @25℃||36 amps @25℃|
|Power dissipation||227 watts @25℃||171 watts @25℃|
|Thermal resistance junction to case||0.55 ℃/watt||0.73 ℃/watt|
Data sheets are available at IPP65R041CFD7 Data Sheet and IPP65R060CFD7 Data Sheet
In TO-247 Packages, there are the IPW65R029CFD7, the IPW65R041CFD7 and the IPW65R060CFD7
|RDS(ON) (max)||29 mΩ||41 mΩ||60 mΩ|
|Qgate (typ) Total||145 nanocoulombs||102 nanocoulombs||68 nanocoulombs|
|QRR (typ)||1.6 microcoulombs||1.2 microcoulombs||0.86 microcoulombs|
|Body diode diF/dt||1300 A/µs||1300 A/µs||1300 A/µs|
|Continuous Drain Current||69 amps @25℃||50 amps @25℃||38 amps @25℃|
|Power dissipation||305 watts @25℃||227 watts @25℃||171 watts @25℃|
|Thermal resistance junction to case||0.41℃/watt||0.55 ℃/watt||0.73 ℃/watt|
For these three, data sheets are located at IPW65R029CFD7, IPW65R041CFD7 and IPW65R060CFD7
In a TO-247 4 Pin Package there is the IPZA65R029CFD7
In “New SiC FET Option for EV Charging Applications from UnitedSiC Adds 4-Lead Kelvin Device”, Dr Dr. Anup Bhalla of United SiC describes how devices offered in TO-247 packages can more easily dissipate the heat they generate. But connections to TO-247 package often present high inductances, limiting switching speeds. But, by using a technique called a Kelvin Connection, this problem can be controlled.
Petschnig Edgar also speaks to this issue in his previously referenced article.
|RDS(ON) (max)||29 mΩ|
|Qgate (typ) Total||145 nanocoulombs|
|QRR (typ)||1.6 microcoulombs|
|Body diode diF/dt||1300 A/µs|
|Continuous Drain Current||69 amps @25℃|
|Power dissipation||305 watts @25℃|
|Thermal resistance junction to case||41℃/watt|
The data sheet is located at IPZA65R029CFD7.
All members of the CD7A family operate over a junction temperature range of -55 to 150℃
They are compliant with RoHS.
They are free of lead and halogen
The new members of the CFD7 family are well suited to applications in:
- EV Charging