This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um…
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.
This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).
Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology,…
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…
Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a…
Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a perfect fit for industrial…
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of…
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and…
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…
The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices
The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including…
The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC…
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly,…
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
This article highlights STMicroelectronics STEVAL-USBPD27S reference design combines the STM32G071 microcontroller…
This article highlights STMicroelectronics STEVAL-USBPD27S reference design combines the STM32G071 microcontroller (MCU), which integrates a…