The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices
The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including…
The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC…
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly,…
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
This article highlights STMicroelectronics STEVAL-USBPD27S reference design combines the STM32G071 microcontroller…
This article highlights STMicroelectronics STEVAL-USBPD27S reference design combines the STM32G071 microcontroller (MCU), which integrates a…
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into…
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.
The new surface-mounted multilayer ceramic chip capacitors are aimed at ameliorating the harmful effects of “tin whiskers”
The new surface-mounted multilayer ceramic chip capacitors are aimed at ameliorating the harmful effects of “tin whiskers”
The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance
The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance
The TCKE712BNL protects power lines with an overvoltage protection function that can be adjusted to user requirements…
The TCKE712BNL protects power lines with an overvoltage protection function that can be adjusted to user requirements with external resistors.
Maxim Integrated, an industry leader with a broad portfolio of high-performance semiconductors has released the MAX20361,…
Maxim Integrated, an industry leader with a broad portfolio of high-performance semiconductors has released the MAX20361, a single/multi-cell solar…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.
The new driver features dual 10 amp source and sink drive capabilities and an integrated thermal pad to reduce junction…
The new driver features dual 10 amp source and sink drive capabilities and an integrated thermal pad to reduce junction to case thermal resistance
This article highlights Infineon Technologies AG 650 V CoolSiC™ Hybrid IGBT portfolio in a discrete package with 650 V…
This article highlights Infineon Technologies AG 650 V CoolSiC™ Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage.
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained…
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications
The new devices are aimed at data center applications and supply 12 VDC at output powers ranging from 1.5 to 3.2 kW
The new devices are aimed at data center applications and supply 12 VDC at output powers ranging from 1.5 to 3.2 kW
The new device enables the fastest wireless charging for smartphones, notebooks and laptops.
The new device enables the fastest wireless charging for smartphones, notebooks and laptops.
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…
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