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Isolated Gate Driver from STMicroelectronics Safely Controls Silicon-Carbide MOSFETs

Isolated Gate Driver from STMicroelectronics Safely Controls Silicon-Carbide MOSFETs

This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…


GaN Systems and Silanna Semiconductor Release ACF Charger Reference Design

GaN Systems and Silanna Semiconductor Release ACF Charger Reference Design

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications


Tower Semiconductor Introduces a Newly Developed, State-of-the-art Galvanic Isolation Technology

Tower Semiconductor Introduces a Newly Developed, State-of-the-art Galvanic Isolation Technology

This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…


ON Semiconductor Expands Its Line Of 650V SiC MOSFETs

ON Semiconductor Expands Its Line Of 650V SiC MOSFETs

The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.


ON Semiconductor launches World’s First Automotive Qualified SiPM  Array Product for LiDAR Applications

ON Semiconductor launches World’s First Automotive Qualified SiPM Array Product for LiDAR Applications

This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.


GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.


Silicon Labs Incorporates New Technology into Wolfspeed’s Wolfpack Series

Silicon Labs Incorporates New Technology into Wolfspeed’s Wolfpack Series

Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).


Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…


Infineon’s CoolGaN Delivers Efficiency and Reliability to Telecom Power Applications

Infineon’s CoolGaN Delivers Efficiency and Reliability to Telecom Power Applications

Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a perfect fit for industrial…


Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.


Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…


Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications


Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…


ROHM Debuts a Line of -40V/-60V P-Channel MOSFETs in Single and Dual Configurations

ROHM Debuts a Line of -40V/-60V P-Channel MOSFETs in Single and Dual Configurations

The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices


Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.


Nexperia Extends LFPAK56D MOSFET Line-up with AEC-Q101-qualified Half-bridge Package

Nexperia Extends LFPAK56D MOSFET Line-up with AEC-Q101-qualified Half-bridge Package

The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC…


Efficient Power Conversion Debuts Laser Driver IC Family

Efficient Power Conversion Debuts Laser Driver IC Family

The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.


Ricoh Electronics Devices Launches a 4-Channel, High-Voltage Window Voltage Detector

Ricoh Electronics Devices Launches a 4-Channel, High-Voltage Window Voltage Detector

For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…


EPC and Renesas Introduce a Demo Board Showcasing GaN Technology

EPC and Renesas Introduce a Demo Board Showcasing GaN Technology

The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon


STMicroelectronics Eases Design of USB Type-C Power Adapters with Efficient Power Delivery and PPS Reference Design

STMicroelectronics Eases Design of USB Type-C Power Adapters with Efficient Power Delivery and PPS Reference Design

This article highlights STMicroelectronics STEVAL-USBPD27S reference design combines the STM32G071 microcontroller (MCU), which integrates a…