ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ release IGBT and silicon…
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ release IGBT and silicon…
The family of solid-state isolators uses coreless transformer technology to ramp up switching speeds while lowering power…
The family of solid-state isolators uses coreless transformer technology to ramp up switching speeds while lowering power dissipation by up to 70%.
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from…
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
Announced at APEC 2024, the highly integrated family of devices reduces package size and increases power density for designers.
Announced at APEC 2024, the highly integrated family of devices reduces package size and increases power density for designers.
Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more…
Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more reliable switching and…
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.
The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.
AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.
AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.
Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply…
Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply controllers in smart meters…
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
ROHM Semiconductor has launched a family of speech synthesis ICs. This article reviews the role of speech synthesis in…
ROHM Semiconductor has launched a family of speech synthesis ICs. This article reviews the role of speech synthesis in automotive applications and…
The COSEL WMA series of power supplies has a low profile and can meet the operating, performance, and international…
The COSEL WMA series of power supplies has a low profile and can meet the operating, performance, and international safety requirements for medical…
One critical barrier to EV adoption is their notoriously long charge times. Onsemi aims to address one piece of the…
One critical barrier to EV adoption is their notoriously long charge times. Onsemi aims to address one piece of the puzzle with new…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
The VOMDA1271 optocoupler from Vishay is AEC-Q102 qualified and features an integrated fast turn-off circuit for isolated…
The VOMDA1271 optocoupler from Vishay is AEC-Q102 qualified and features an integrated fast turn-off circuit for isolated FET driving applications…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
Alpha & Omega Semiconductor has released high-voltage super junction fast recovery diode MOSFET devices for various…
Alpha & Omega Semiconductor has released high-voltage super junction fast recovery diode MOSFET devices for various applications, including…
SemiQ’s high-performance silicon carbide power modules are rated to 1200 V and offer high efficiency and power density…
SemiQ’s high-performance silicon carbide power modules are rated to 1200 V and offer high efficiency and power density for energy storage, EV…
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