LED driver with four 120mA channels features low input voltage and highest efficiency in a single chip
LED driver with four 120mA channels features low input voltage and highest efficiency in a single chip
Aimed at ADAS applications, the device tracks undervoltage and overvoltage while reducing both system complexity and BOM
Aimed at ADAS applications, the device tracks undervoltage and overvoltage while reducing both system complexity and BOM
The AEA600F layout is optimized for free-air convection making it ideal for use in equipment being operated in low noise…
The AEA600F layout is optimized for free-air convection making it ideal for use in equipment being operated in low noise environments.
This article highlights Flex Power Modules that introduces the BMR482, its second generation of direct conversion…
This article highlights Flex Power Modules that introduces the BMR482, its second generation of direct conversion isolated DC/DC converter.
Advanced battery material company NanoGraf has reached a new energy-density milestone for silicon anode cells.
Advanced battery material company NanoGraf has reached a new energy-density milestone for silicon anode cells.
The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required
The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required
The devices garner energy available from the environment to power devices and to simultaneously store energy into a…
The devices garner energy available from the environment to power devices and to simultaneously store energy into a storage element
The family is optimized for power factor correction (PFC) for residential and commercial air conditioning systems as well…
The family is optimized for power factor correction (PFC) for residential and commercial air conditioning systems as well as welding applications.
The new silicon diodes offer the same low-switching losses as silicon carbide (SiC) devices but at far lower cost
The new silicon diodes offer the same low-switching losses as silicon carbide (SiC) devices but at far lower cost
Recent years have seen evolving markets of battery-driven applications and advanced industrial equipment such as 5G base…
Recent years have seen evolving markets of battery-driven applications and advanced industrial equipment such as 5G base stations and factory…
These products are recognized as benchmarks in efficiency – in process, size, power and performance — with…
These products are recognized as benchmarks in efficiency – in process, size, power and performance — with industry-leading small packages that…
The new device works from a 3.8- to 36-volt input and provides a programmable 4-amp output ranging from 1 to 7 volts
The new device works from a 3.8- to 36-volt input and provides a programmable 4-amp output ranging from 1 to 7 volts
The new single-channel, bidirectional Transient Voltage Suppressors (TVS) provide ESD protection for USB Type-C applications
The new single-channel, bidirectional Transient Voltage Suppressors (TVS) provide ESD protection for USB Type-C applications
Supercapacitors may be combined with batteries to add the advantages of high capacity and low internal resistance. Low…
Supercapacitors may be combined with batteries to add the advantages of high capacity and low internal resistance. Low leakage currents will extend…
A team of scientists from Tokyo Institute of Technology developed a 3D functional interposer that saves package area and…
A team of scientists from Tokyo Institute of Technology developed a 3D functional interposer that saves package area and allows for low noise and…
Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply…
Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
With high voltage ranges of 250 to 950V and low voltage ranges of 10 to 54V, the two units deliver 6 or 12 kW of power
With high voltage ranges of 250 to 950V and low voltage ranges of 10 to 54V, the two units deliver 6 or 12 kW of power
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