Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…
Continuing its recent moves to increase production capacity in Europe, Dutch semiconductor manufacturer Nexperia has…
Continuing its recent moves to increase production capacity in Europe, Dutch semiconductor manufacturer Nexperia has acquired 100% ownership of the…
Micro SMA packaged, 25ns, max. reverse recovery time diodes are AEC-Q101 qualified; 1A- and 2A-rated parts feature low…
Micro SMA packaged, 25ns, max. reverse recovery time diodes are AEC-Q101 qualified; 1A- and 2A-rated parts feature low reverse leakage, low reverse…
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon…
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon Carbide (SiC) to give excellent…
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
NXP Semiconductors has integrated Gallium Nitride (GaN) technology into its 5G multi-chip module platform.
NXP Semiconductors has integrated Gallium Nitride (GaN) technology into its 5G multi-chip module platform.
The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range
The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
Researchers at the University of Bristol discovered a method to quantify electric fields with a semiconductor device…
Researchers at the University of Bristol discovered a method to quantify electric fields with a semiconductor device which would lead to the…
Both N-Channel devices feature a source-drain recovery charge (QRR) of zero and a very low total gate charge (QG).
Both N-Channel devices feature a source-drain recovery charge (QRR) of zero and a very low total gate charge (QG).
A semiconductor trade association and an automotive industry think tank team up for a supply chain partnership.
A semiconductor trade association and an automotive industry think tank team up for a supply chain partnership.
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required
The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required
The new single-channel, bidirectional Transient Voltage Suppressors (TVS) provide ESD protection for USB Type-C applications
The new single-channel, bidirectional Transient Voltage Suppressors (TVS) provide ESD protection for USB Type-C applications
Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply…
Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for…
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for the power stage of…
The tiny buck converters, aimed at USB-PD applications, operate over 7 to 27 VDC inputs and supply 3.3 to 21 VDC
The tiny buck converters, aimed at USB-PD applications, operate over 7 to 27 VDC inputs and supply 3.3 to 21 VDC
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