The 1/8th brick sized demonstration board uses eGaN FETs switching at 1 MHz to deliver its best in class power density
The 1/8th brick sized demonstration board uses eGaN FETs switching at 1 MHz to deliver its best in class power density
ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a…
ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a single compact…
New York startup lands $498,000 from the Department of Energy to develop silicon carbide semiconductors and modules.
New York startup lands $498,000 from the Department of Energy to develop silicon carbide semiconductors and modules.
A group of scientists from Japan recently published a study on the development of a supposedly cheaper and non-toxic…
A group of scientists from Japan recently published a study on the development of a supposedly cheaper and non-toxic narrow-gap semiconductor…
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient,…
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient, and at a comparable cost.
Learn about the traits of the rectifying p-n junctions in semiconductors.
Learn about the traits of the rectifying p-n junctions in semiconductors.
In this “semiconductor basics” series, we’ll learn about the properties of the P-N junction with no external power applied.
In this “semiconductor basics” series, we’ll learn about the properties of the P-N junction with no external power applied.
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for…
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for creating gallium nitride-based…
The new power management IC (PMIC) channels power to applications and can also serve to charge the same application’s…
The new power management IC (PMIC) channels power to applications and can also serve to charge the same application’s internal battery
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive…
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports…
The presence and properties of electrons and holes are fundamental to understand how semiconductor devices operate
The presence and properties of electrons and holes are fundamental to understand how semiconductor devices operate
Samsung forgoes IPMs for the highest possible price, performance levels that only discrete components can offer.
Samsung forgoes IPMs for the highest possible price, performance levels that only discrete components can offer.
This article highlights Proton-Electrotex the launch of serially produced single-component diode and thyristor modules B0.
This article highlights Proton-Electrotex the launch of serially produced single-component diode and thyristor modules B0.
With competing devices spec’d at 6 volts, ROHM’s devices will offer the designer a critical 2-volt edge.
With competing devices spec’d at 6 volts, ROHM’s devices will offer the designer a critical 2-volt edge.
This article highlights Infineon OptiMOS™ power MOSFET packages in the TOLx family, which are theTOLG (TO-Leaded with…
This article highlights Infineon OptiMOS™ power MOSFET packages in the TOLx family, which are theTOLG (TO-Leaded with Gullwing leads)…
The MORNSUN "305RAC (Reliable under All Conditions)" series can be understood that the input voltage range is 85-305VAC.
The MORNSUN "305RAC (Reliable under All Conditions)" series can be understood that the input voltage range is 85-305VAC.
The Si2 Compact Model Coalition (CMC) has announced it will fund and help institute the standardization of a SPICE model…
The Si2 Compact Model Coalition (CMC) has announced it will fund and help institute the standardization of a SPICE model for silicon carbide MOSFETs.
This article highlights GeneSiC Semiconductor 750V G3R™SiC MOSFETs that deliver unprecedented levels of performance,…
This article highlights GeneSiC Semiconductor 750V G3R™SiC MOSFETs that deliver unprecedented levels of performance, robustness and quality that…
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its…
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…
The Fraunhofer Institute for Reliability and Microintegration (Fraunhofer IZM) in Berlin has announced a new project…
The Fraunhofer Institute for Reliability and Microintegration (Fraunhofer IZM) in Berlin has announced a new project aimed at increasing the range…
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