Wolfspeed will manufacture its XM3 silicon carbide (SiC) modules at its just-opened 200 mm fab in upstate New York, the largest in the world, for…
Wolfspeed will manufacture its XM3 silicon carbide (SiC) modules at its just-opened 200 mm fab in upstate New York, the largest in the world, for…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s…
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s demands for high efficiency and…
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250…
Introduced March 2 at the UK’s Future Propulsion Conference 2022 (FPC2022), the inverter delivers 350 kW peak and 250 kW continuous for powering…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild…
How integrated GaN technology drives superior performance, simpler design, and reduced cost in 48 V/12 V automotive mild hybrid applications.
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended…
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
The technology access agreement (TAA) allows II-VI to gain access to GE’s wide-ranging silicon carbide (SiC) module…
The technology access agreement (TAA) allows II-VI to gain access to GE’s wide-ranging silicon carbide (SiC) module technology and to its teams…
The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN…
The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN or Silicon FET.
Fuji Electric introduces a new product in a well-known package to increase the output power of IGBT modules by applying…
Fuji Electric introduces a new product in a well-known package to increase the output power of IGBT modules by applying “RC-IBGT” (RC stands…
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