This article examines methods and techniques for using the active low output of a supervisory circuit to drive a high-side input switch to execute…
This article examines methods and techniques for using the active low output of a supervisory circuit to drive a high-side input switch to execute…
Which active components fit well into applications for green hydrogen systems?
Which active components fit well into applications for green hydrogen systems?
The company's fourth generation of SiC MOSFETs comes with upgrades to reverse recovery transients and lower RDS(on).
The company's fourth generation of SiC MOSFETs comes with upgrades to reverse recovery transients and lower RDS(on).
Advances in radio frequency generation have led to innovative designs transforming applications within the sub-100 MHz…
Advances in radio frequency generation have led to innovative designs transforming applications within the sub-100 MHz region. This article…
Thanks to a new process, the two power FETs feature incredibly low on-resistance and high switching efficiency.
Thanks to a new process, the two power FETs feature incredibly low on-resistance and high switching efficiency.
High power densities lead to high operating temperatures, but what does this mean for SiC MOSFETs regarding critical…
High power densities lead to high operating temperatures, but what does this mean for SiC MOSFETs regarding critical parameters like VGS(th),…
Increasing hyperscale data center power demands are setting tough new requirements for efficient power conversion, which…
Increasing hyperscale data center power demands are setting tough new requirements for efficient power conversion, which are critically needed so…
Toshiba, Littelfuse, and Vishay have introduced MOSFET technologies to maximize efficiency without compromising reliability.
Toshiba, Littelfuse, and Vishay have introduced MOSFET technologies to maximize efficiency without compromising reliability.
The MOSFETs are targeted for automotive and industrial power electronics.
The MOSFETs are targeted for automotive and industrial power electronics.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Essential industries depend on reliable backup power systems to keep operations running continuously.
Essential industries depend on reliable backup power systems to keep operations running continuously.
Navitas’ IntelliWeave uses gallium nitride to operate energy-intensive data centers reliably and efficiently.
Navitas’ IntelliWeave uses gallium nitride to operate energy-intensive data centers reliably and efficiently.
GaN and SiC technologies are being deployed across legacy silicon applications. What have we learned so far, and what’s to come?
GaN and SiC technologies are being deployed across legacy silicon applications. What have we learned so far, and what’s to come?
ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV…
ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV powertrains and charging circuits.
Integrating E-Mode GaNFETs with a GaN-based gate regulating circuit can significantly enhance the reliability and…
Integrating E-Mode GaNFETs with a GaN-based gate regulating circuit can significantly enhance the reliability and compatibility of gate driving for…
These advancements aim to reduce the footprint of MOSFETs while increasing power density and efficiency.
These advancements aim to reduce the footprint of MOSFETs while increasing power density and efficiency.
Navitas Semiconductor and Vishay are offering new MOSFETs for automotive and industrial use.
Navitas Semiconductor and Vishay are offering new MOSFETs for automotive and industrial use.
The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.
The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.
Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, …
Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, and more power density.
With an eye on efficiency, thermal resistance, and size, major power players have added new MOSFETs to their portfolios.
With an eye on efficiency, thermal resistance, and size, major power players have added new MOSFETs to their portfolios.
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