Learn how to determine the RC high-pass filter's cut-off frequency and transfer function and plot gain/frequency and phase/frequency response…
July 19, 2023 by Amna Ahmad
Electric vehicle (EV) DC fast chargers currently under development have to meet more demanding specifications than today’s installed charger…
July 16, 2023 by Riccardo Collura
When designing power applications with gallium-nitride (GaN) wide-bandgap technology, proper control of the gate-driving circuit is essential to…
July 13, 2023 by Mike Wens
Onsemi has announced a strategic agreement with Kempower to provide high-voltage EliteSiC MOSFETs and diodes for Kempower’s EV fast-charging…
May 27, 2023 by Mike Falter
Dr. Peter Wawer brings insights from a distinguished career that has touched three unique major semiconductor technologies: silicon photovoltaics,…
May 16, 2023 by Dale Wilson
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
April 14, 2023 by Mike Falter
The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power electronics. Littelfuse…
March 11, 2023 by Littelfuse
Demand for SiC products remains strong across multiple industries as Wolfspeed aggressively expands SiC production to multiple facilities.
January 08, 2023 by Mike Falter
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor drives, industrial power…
November 20, 2022 by Mike Falter
High-Voltage Direct Current technology has seen many technological advancements in the past century. This article provides an introduction and…
August 22, 2022 by Ahmad Ezzeddine
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
July 04, 2022 by Gary Elinoff
New technological and market trends are constantly pushing for smaller solutions with higher power capabilities. The advancement of electric…
June 08, 2022 by Tomas Hudson
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…
June 06, 2022 by Xuning Zhang
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
June 05, 2022 by Gary Elinoff
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
May 28, 2022 by Wilhelm Rusche
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
May 09, 2022 by Gary Elinoff
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
April 19, 2022 by Gary Elinoff
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
April 08, 2022 by Gary Elinoff
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
March 31, 2022 by Gary Elinoff
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
March 07, 2022 by Gary Elinoff
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