The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
Rohm, Littelfuse, and Ideal Semiconductor each introduced high-performance MOSFETs.
Rohm, Littelfuse, and Ideal Semiconductor each introduced high-performance MOSFETs.
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for accurate cooling and reliable…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added resistance for each design.
The dual-phase trans-inductance voltage regulator modules aim to bring compact, high-efficiency power to AI and HPC workloads
The dual-phase trans-inductance voltage regulator modules aim to bring compact, high-efficiency power to AI and HPC workloads
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
Learn how a new MOSFET architecture stretches the performance of silicon power devices using a patented approach.
Learn how a new MOSFET architecture stretches the performance of silicon power devices using a patented approach.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V…
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V automotive applications.
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power…
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
The photorelay aims at 800 V battery management systems in electric vehicles and energy storage applications.
The photorelay aims at 800 V battery management systems in electric vehicles and energy storage applications.
The 1200 V CoolSiC G2 MOSFETs deliver higher power density, lower losses, and improved thermal performance for industrial systems.
The 1200 V CoolSiC G2 MOSFETs deliver higher power density, lower losses, and improved thermal performance for industrial systems.
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs,…
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
Learn reverse battery polarity protection (RBP) techniques for automotive design. This article focuses on the benefits of…
Learn reverse battery polarity protection (RBP) techniques for automotive design. This article focuses on the benefits of miniature packaged…
Toshiba’s SOP Advance(E) package yields lower losses and better thermal performance.
Toshiba’s SOP Advance(E) package yields lower losses and better thermal performance.
Tesla’s $3.4 billion battery project with LG Energy leads tech business news this week, along with moves by Toshiba,…
Tesla’s $3.4 billion battery project with LG Energy leads tech business news this week, along with moves by Toshiba, Ideal Semiconductor,…
Announced today, Ideal Semiconductor is beginning full production of its proprietary silicon MOSFETs. EEPower met with…
Announced today, Ideal Semiconductor is beginning full production of its proprietary silicon MOSFETs. EEPower met with the company's leaders,…
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
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