PCIM 2025: SiC, GaN Innovations For Next-Gen Power Electronics

Leaders in power electronics showcased innovations spanning silicon carbide (SiC), gallium nitride (GaN), MEMS switching, advanced magnetics, and intelligent packaging at PCIM Europe 2025. Beyond the widely covered SiC MOSFET announcements and GaN breakthroughs, this year’s show delivered several standout product unveilings across power conversion, electric vehicle traction, USB PD, and megawatt-scale switching.

Cambridge GaN Devices at PCIM 2025. Image used courtesy of Cambridge GaN Devices

Alpha & Omega Expands SiC and Intelligent Module Portfolio

Alpha & Omega Semiconductor (AOS) made waves with its new generation of 1200 V SiC MOSFETs, boasting up to 30% lower switching losses than its Gen2 line. Targeting EV traction inverters and industrial drives, the AEC-Q101-qualified devices come in TO-247 4-lead packages and demonstrate high ruggedness through HV-H3TRB testing.

AOS AOM020V120X3Q Gen-3 SiC MOSFET. Image used courtesy of Alpha & Omega Semiconductor

AOS also unveiled its Mega IPM-7 family. These are intelligent power modules built for high-density motor drives. The 600 V, 3 A modules integrate Gen2 IGBTs with HV gate drivers, delivering 100 W in compact enclosures. Coupled with thermally efficient low-voltage packaging innovations like double-sided DFNs and top-side-cooled layouts, AOS is doubling down on thermal and density performance.

Menlo Micro Scales Up MEMS for Megawatt Switching

MEMS switch innovator Menlo Micro showcased its scalable power switching architecture that enables its M9200 SPST Ideal Switch, which allows high-efficiency switching at up to 300 V and 10 A in microsecond response times, to be deployed in advanced power distribution systems. The technology's standout feature: ultra-low on-resistance and virtually no energy loss during switching.

Menlo Micro’s booth at PCIM 2025. Image from Menlo Micro

In a PCIM demo simulating a 1000 V, 10,000 A circuit breaker, Menlo paralleled MM9200 devices to demonstrate scalable MW-level solid-state protection, representing a breakthrough for grid, industrial, and data center applications.

Pulsiv Delivers Ultra-Cool 65 W USB PD Modules

U.K. startup Pulsiv launched a USB-C Power Delivery module series offering 65 W from an ultra-compact, thermally optimized AC/DC platform. Built with a GaN-based architecture and operating at peak efficiencies of 97.3%, the modules reached only 32°C above ambient temperature during full-load testing.

Pulsiv’s fully-assembled 65 W USB-C cube. Image used courtesy of Pulsiv

Pulsiv’s patented switching technique eliminates inrush current, supporting multi-device deployment on single breakers. Modules use a 200 VDC link and polymer capacitors for 25-year reliability. A 240 W variant is slated for release by the end of 2025.

Microchip’s SiC Systems, Power Modules; Vishay’s SiC Modules, Passives

Microchip demonstrated its mSiC family’s latest isolated gate driver designed for 3.3 kV SiC modules. Featuring 10.2 kV isolation and integrated Augmented Switching control, the driver simplifies the deployment of HV100 package SiC MOSFETs. The company also exhibited new 1700 V, 900 A IGBT power modules with 15% lower losses and improved thermal and dv/dt performance, targeting aviation, traction, and heavy industry.

Microchip at PCIM

Meanwhile, Vishay used PCIM to highlight a 5 kW, 48 V micromobility inverter and a 22 kW bidirectional OBC reference design featuring its latest SiC MOSFET modules and Gen V 80 V MOSFETs. The company’s booth emphasized integrated passive solutions, including DC-link film capacitors with built-in venting, EMI-shielded inductors, and high-power resistors, showcasing Vishay’s expanding footprint across automotive and energy applications.

Cambridge GaN’s EV Inverters; Exxelia’s Integrated Magnetics and Bus Bars

Cambridge GaN Devices introduced a novel hybrid inverter architecture called Combo ICeGaN, combining fast-switching GaN power ICs with conventional IGBTs for cost-effective, high-efficiency 800 V EV drivetrains. The company’s 650 V GaN devices feature integrated Miller clamping and high dv/dt immunity, enabling parallel operation in power levels from 1kW to 100kW. Demonstrators included a 100 kW three-level ANPC inverter with 25 kW/L power density and a 3 kW totem-pole PFC topping 99.1% efficiency.

Exxelia presented dual-function magnetic components for high-frequency power converters, including a 5 kVA DAB transformer/inductor combo operating at 100 kHz. The company also launched 25 kVA versions and showcased bus bars from its new SVM division, designed for fast-switching SiC and IGBT modules with minimized inductance and customizable finishes.

From MEMS breakthroughs to hybrid GaN/IGBT traction systems, PCIM 2025 broadened the field of power electronics innovation. The focus on packaging, thermal management, and MW-scale switching marks a shift toward integrated, scalable, and application-ready solutions that will define the next decade of power system design.