Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
Learn reverse battery polarity protection (RBP) techniques for automotive design. This article focuses on the benefits of…
Learn reverse battery polarity protection (RBP) techniques for automotive design. This article focuses on the benefits of miniature packaged…
Toshiba’s SOP Advance(E) package yields lower losses and better thermal performance.
Toshiba’s SOP Advance(E) package yields lower losses and better thermal performance.
Tesla’s $3.4 billion battery project with LG Energy leads tech business news this week, along with moves by Toshiba,…
Tesla’s $3.4 billion battery project with LG Energy leads tech business news this week, along with moves by Toshiba, Ideal Semiconductor,…
Announced today, Ideal Semiconductor is beginning full production of its proprietary silicon MOSFETs. EEPower met with…
Announced today, Ideal Semiconductor is beginning full production of its proprietary silicon MOSFETs. EEPower met with the company's leaders,…
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
The GaN releases expand Renesas’ ecosystem-driven approach for the wide bandgap semiconductor.
Toshiba’s new device structures aim to boost efficiency and reliability in high-temperature power conversion systems.
Toshiba’s new device structures aim to boost efficiency and reliability in high-temperature power conversion systems.
STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.
STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.
The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.
The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.
In part two of this article series, we dive deeper into the design details of the solution and present experimental…
In part two of this article series, we dive deeper into the design details of the solution and present experimental results for a 240 VAC input to…
The latest devices from Microchip, Rohm, and Semi-Q offer enhanced radiation protection, increased operation range, lower…
The latest devices from Microchip, Rohm, and Semi-Q offer enhanced radiation protection, increased operation range, lower conduction losses, and…
Compressors in refrigerators and freezers are headed for a time of change, as system designs must meet demands for…
Compressors in refrigerators and freezers are headed for a time of change, as system designs must meet demands for greater power efficiency. Learn…
PCIM 2025 featured advancements in SiC and GaN devices, power modules, and ICs targeting electric vehicles, renewable…
PCIM 2025 featured advancements in SiC and GaN devices, power modules, and ICs targeting electric vehicles, renewable energy, and other high-power…
SemiQ, Infineon, Nexperia, and Navitas debuted SiC devices to tackle rising demands in thermal control, system…
SemiQ, Infineon, Nexperia, and Navitas debuted SiC devices to tackle rising demands in thermal control, system efficiency, and automotive-grade…
Proper design of a low-power auxiliary power supply within traction inverters is critical for ensuring the functional…
Proper design of a low-power auxiliary power supply within traction inverters is critical for ensuring the functional safety of EVs. Learn how SiC…
Infineon, Mitsubishi, and Navitas have released new power modules for high-voltage applications.
Infineon, Mitsubishi, and Navitas have released new power modules for high-voltage applications.
Navitas Semiconductor and GigaDevice have launched a joint R&D lab to integrate Navitas’ GaNFast power ICs with…
Navitas Semiconductor and GigaDevice have launched a joint R&D lab to integrate Navitas’ GaNFast power ICs with GigaDevice’s GD32…
New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration…
New components from GAIA, Infineon, Metis, ROHM, and TDK focus on improving power density, system safety, and integration across energy,…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.
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