The move bolsters and diversifies Allegro’s extant portfolio of voltage, current and power sensors, as well as drivers.
The move bolsters and diversifies Allegro’s extant portfolio of voltage, current and power sensors, as well as drivers.
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using…
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status…
One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative…
ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices.…
ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices. Several applications in…
The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the…
The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…
The ChiP (converter housed in package) fabrication facility will produce power modules in the United States using process…
The ChiP (converter housed in package) fabrication facility will produce power modules in the United States using process steps analogous to…
The companies will look to combine Nexperia’s extensive background in gallium nitride (GaN) with Kyocera AVX’s…
The companies will look to combine Nexperia’s extensive background in gallium nitride (GaN) with Kyocera AVX’s expertise in advanced packaging…
(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN…
(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN is now widely used in…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will…
With Delta’s power supply development know-how and ROHM’s vast experience in power semiconductors, the companies will look to develop 600 V…
The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are…
The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have…
Researchers earlier developed an energy storage system that captures sunlight and stores it for up to 18 years. They have now succeeded in creating…
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
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