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GaN Systems, PowerSphyr To Develop “Industry-first” WPT Lineup

GaN Systems, PowerSphyr To Develop “Industry-first” WPT Lineup

Together, the companies will look to deliver a portfolio of end-to-end wireless power transfer solutions for industrial and automotive applications.


News Jul 21, 2022 by Ian Hahn
Wide Bandwidth Current Transducers for Power Analysis

Wide Bandwidth Current Transducers for Power Analysis

Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…


Gallium Nitride and Silicon Carbide: Compound Materials for Radiation-Hardened Applications

Gallium Nitride and Silicon Carbide: Compound Materials for Radiation-Hardened Applications

For a long time, silicon-based devices have represented the baseline standard in the semiconductor landscape. Starting from 2007, due to Moore’s…


Nano Pulse Technology for Primary DC/DC Converter Design: Reducing Application PCB Size and Cost

Nano Pulse Technology for Primary DC/DC Converter Design: Reducing Application PCB Size and Cost

The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…


CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

The International Conference on Integrated Power Electronics Systems (CIPS) focuses on the technological background, starting with the components…


EPC Adds Another Rad-hard Gallium Nitride Power FET

EPC Adds Another Rad-hard Gallium Nitride Power FET

The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…


ST’s New Chip Could Save 15 Nuclear Plants Worth of Energy

ST’s New Chip Could Save 15 Nuclear Plants Worth of Energy

The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.


GaN Systems, EPC Both Unveil New GaN Power Transistors

GaN Systems, EPC Both Unveil New GaN Power Transistors

EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…


Finding the Right Technology to Solve the Data Center Power Challenge

Finding the Right Technology to Solve the Data Center Power Challenge

Digitization and the rapid deployment of cloud services have boosted the growth of datacenters worldwide. Datacenters consume close to one percent…


New M2 Chip From Apple Offers Even More Efficiency

New M2 Chip From Apple Offers Even More Efficiency

Next-generation M2 processor from Apple targets improved power and performance for MacBook laptops.


News Jun 08, 2022 by Mike Falter
Allegro to Acquire Heyday Integrated Circuits, Expand EV Reach

Allegro to Acquire Heyday Integrated Circuits, Expand EV Reach

The move bolsters and diversifies Allegro’s extant portfolio of voltage, current and power sensors, as well as drivers.


News Jun 08, 2022 by Gary Elinoff
Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs

Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…


EPC Says its New 40 V GaN FET Is World’s Smallest at 1.1 mΩ

EPC Says its New 40 V GaN FET Is World’s Smallest at 1.1 mΩ

The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…


GaN vs Silicon Smackdown

GaN vs Silicon Smackdown

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative…


SiC MOSFETs Push the Boundaries of Power Electronics

SiC MOSFETs Push the Boundaries of Power Electronics

ROHM’s 4th generation SiC MOSFETs offer improved characteristics compared to the older generation, and at lower prices. Several applications in…


SiC MOSFET Enhances Stability Under Real Application Conditions

SiC MOSFET Enhances Stability Under Real Application Conditions

The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and improvements from which the targeted applications will…


Vicor Touts its American “ChiP” Fab as the Industry’s First

Vicor Touts its American “ChiP” Fab as the Industry’s First

The ChiP (converter housed in package) fabrication facility will produce power modules in the United States using process steps analogous to…


News May 26, 2022 by Gary Elinoff
Nexperia and Kyocera AVX to Jointly Develop GaN Power Modules For EVs

Nexperia and Kyocera AVX to Jointly Develop GaN Power Modules For EVs

The companies will look to combine Nexperia’s extensive background in gallium nitride (GaN) with Kyocera AVX’s expertise in advanced packaging…


News May 25, 2022 by Gary Elinoff
GaN — Assuring Price, Volume and Security of Supply

GaN — Assuring Price, Volume and Security of Supply

(Performance and Reliability are Expected). Gallium nitride is still regarded as a new technology by many. Although GaN is now widely used in…


Efficient Power Conversion Unveils New 200 V Rad-hard GaN FET

Efficient Power Conversion Unveils New 200 V Rad-hard GaN FET

The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…