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Transphorm GaN FETs and Microchip Digital Control in 4kW PFC Eval Board

Transphorm GaN FETs and Microchip Digital Control in 4kW PFC Eval Board

9A Low Side Silicon Carbide MOSFET and IGBT Driver

9A Low Side Silicon Carbide MOSFET and IGBT Driver

6.6kW Bi-Directional EV OBC with Silicon Carbide and Digital Control – Reference Design

6.6kW Bi-Directional EV OBC with Silicon Carbide and Digital Control – Reference Design

Cree Adds 650V Silicon Carbide MOSFETs and Eval Kit

Cree Adds 650V Silicon Carbide MOSFETs and Eval Kit

Bringing Micro LEDs to the Dimensions of the Silicon Industry with ALLOS’ 200mm and 300mm GaN-on-Si Epiwafers

Bringing Micro LEDs to the Dimensions of the Silicon Industry with ALLOS’ 200mm and 300mm GaN-on-Si Epiwafers

ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.


Infineon Adds D²PAK Real 2-Pin Packages to its SiC Schottky Family

Infineon Adds D²PAK Real 2-Pin Packages to its SiC Schottky Family

3C+1A World’s Smallest & Lightest 100W GaN Charger

3C+1A World’s Smallest & Lightest 100W GaN Charger

Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-mobility

3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-mobility

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Automotive Qualification

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Automotive Qualification

By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power Integrations delivers a…


Transphorm’s GaN Used in HZZH’s 98% Efficient Power Module

Transphorm’s GaN Used in HZZH’s 98% Efficient Power Module

The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.


new products Mar 21, 2020 by Transphorm
Richardson RFPD Announces Availability of 1200 V, 425 A SiC Switching-Loss Optimized, XM3 Half-Bridge Module from Wolfspeed

Richardson RFPD Announces Availability of 1200 V, 425 A SiC Switching-Loss Optimized, XM3 Half-Bridge Module from Wolfspeed

Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from Wolfspeed, a Cree Company.


4-A / 6-A, Isolated Dual-Channel Gate Driver for SiC and Si Power Switches

4-A / 6-A, Isolated Dual-Channel Gate Driver for SiC and Si Power Switches

GaN Chip Enables Smallest 100W and 65W 4-Port Chargers

GaN Chip Enables Smallest 100W and 65W 4-Port Chargers

Transphorm’s GaN Used in HZZH’s 98 Percent Efficient 3kW Power Module

Transphorm’s GaN Used in HZZH’s 98 Percent Efficient 3kW Power Module

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Qualification

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Qualification

Microchip Expands Silicon Carbide (SiC) Family of Power Electronics to Provide System Level Improvements in Efficiency, Size and Reliability

Microchip Expands Silicon Carbide (SiC) Family of Power Electronics to Provide System Level Improvements in Efficiency, Size and Reliability

Microchip introduces SiC SBD Modules that utilizes Microchip's newest generation of SiC die.


EPC Announces 80V / 12.5A Half-Bridge GaN Power IC and Dev Board

EPC Announces 80V / 12.5A Half-Bridge GaN Power IC and Dev Board

Microchip Adds 700V, 1200V, 1700V SiC Modules Plus 30kW PFC Dev Board

Microchip Adds 700V, 1200V, 1700V SiC Modules Plus 30kW PFC Dev Board

Power Integrations Adds 750V GaN Transistors to InnoSwitch3 ICs

Power Integrations Adds 750V GaN Transistors to InnoSwitch3 ICs