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ON Semiconductor Introduces New 900 V and 1200 V SiC MOSFETs for Demanding Applications

ON Semiconductor Introduces New 900 V and 1200 V SiC MOSFETs for Demanding Applications

ON Semiconductor has expanded its range of wide bandgap (WBG) devices with the introduction of two additional families of silicon carbide (SiC).


new products Mar 11, 2020 by onsemi
ON Semi Adds 900V and 1200V Silicon Carbide FETs for Demanding Applications

ON Semi Adds 900V and 1200V Silicon Carbide FETs for Demanding Applications

CISSOID Introduces New SiC Mosfet Intelligent Power Module for E-Mobility

CISSOID Introduces New SiC Mosfet Intelligent Power Module for E-Mobility

The IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET module with built-in gate drivers.


new products Mar 09, 2020 by CISSOID
Ultra-High CMTI Isolated Gate Drivers for SiC or GaN FETs

Ultra-High CMTI Isolated Gate Drivers for SiC or GaN FETs

3-Phase Silicon Carbide MOSFET Intelligent Power Module for E-Mobility

3-Phase Silicon Carbide MOSFET Intelligent Power Module for E-Mobility

SiC and Digital Control Enable 3.3kW Bidirectional Power Converter Eval Board

SiC and Digital Control Enable 3.3kW Bidirectional Power Converter Eval Board

Teledyne e2v HiRel Announces New HRel 100V GaN Power HEMT

Teledyne e2v HiRel Announces New HRel 100V GaN Power HEMT

100V GaN E-HEMT Full Bridge Evaluation Board

100V GaN E-HEMT Full Bridge Evaluation Board

Navitas‘ 65W GaN Charger Solution Chosen by Xiaomi for Mi 10 Pro

Navitas‘ 65W GaN Charger Solution Chosen by Xiaomi for Mi 10 Pro

650V Silicon Carbide MOSFET Family offers RDS(on) Down to 27mΩ

650V Silicon Carbide MOSFET Family offers RDS(on) Down to 27mΩ

650V, 1200V, and 1700V Silicon Carbide Schottky Diodes Handle up to 50A

650V, 1200V, and 1700V Silicon Carbide Schottky Diodes Handle up to 50A

Silicon Carbide FETs Claim Lowest RDS(on) in DFN 8×8 format

Silicon Carbide FETs Claim Lowest RDS(on) in DFN 8×8 format

200W Desktop Adapters Feature GaN in a Lighter, Smaller Package

200W Desktop Adapters Feature GaN in a Lighter, Smaller Package

The World of Power Semiconductor Devices Meets in Vienna

The World of Power Semiconductor Devices Meets in Vienna

The 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) will be held in Vienna, Austria, May 17–21, 2020.


new products Feb 01, 2020 by ISPSD
Desktop Adapters Feature GaN Technology in a Lighter Smaller Package

Desktop Adapters Feature GaN Technology in a Lighter Smaller Package

CUI Inc announced the addition of two GaN desktop ac-dc power supply series to its SDI product family.


new products Jan 31, 2020 by CUI Inc.
Mouser’s Inventory Strengthened by Qorvo’s Latest Wide Bandgap Power Amplifier & Advanced Motor Controller/Driver

Mouser’s Inventory Strengthened by Qorvo’s Latest Wide Bandgap Power Amplifier & Advanced Motor Controller/Driver

The 100-W QPA3069 power amplifier is predominantly focused on defense and avionics applications.


new products Jan 28, 2020 by Mouser
Reinforced Isolated Single-Channel Gate Driver for SiC MOSFETs and IGBTs

Reinforced Isolated Single-Channel Gate Driver for SiC MOSFETs and IGBTs

Silicon Carbide Gate Drive Evaluation Platform from Littelfuse

Silicon Carbide Gate Drive Evaluation Platform from Littelfuse

GaN Systems Captures a Place in the 2020 Global Cleantech 100

GaN Systems Captures a Place in the 2020 Global Cleantech 100

GaN Systems Captures a Place in the 2020 Global Cleantech 100.


new products Jan 16, 2020 by GaN Systems
MOSHEMT  Innovative Transistor Technology Reaches Record Frequencies

MOSHEMT Innovative Transistor Technology Reaches Record Frequencies

This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off frequencies, the MOSHEMTs.