Mitsubishi Electric has launched a power module in its DIPIPM™ family which incorporates MOSFETs based on SiC material.
Mitsubishi Electric has launched a power module in its DIPIPM™ family which incorporates MOSFETs based on SiC material.
Infineon highlights the new EasyPACK™ module with CoolSiC™ automotive MOSFET technology, a 1200 V half-bridge module…
Infineon highlights the new EasyPACK™ module with CoolSiC™ automotive MOSFET technology, a 1200 V half-bridge module with an 8 mΩ/150 A…
This article highlights Infineon EasyPACK™ module with CoolSiC™ automotive MOSFET technology, a 1200 V half-bridge…
This article highlights Infineon EasyPACK™ module with CoolSiC™ automotive MOSFET technology, a 1200 V half-bridge module with an 8 mΩ/150 A…
Nexperia highlights the next-generation, 650-volt gallium nitride (GaN) technology for automotive, 5G, and datacenter…
Nexperia highlights the next-generation, 650-volt gallium nitride (GaN) technology for automotive, 5G, and datacenter applications.
ROHM hightlights its 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main…
ROHM hightlights its 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as…
In a recent collaboration with the Chalmers University of Technology, SweGaN introduced a 'buffer-free' concept for…
In a recent collaboration with the Chalmers University of Technology, SweGaN introduced a 'buffer-free' concept for GaN-on-SiC electron…
Nexperia highlights a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247…
Nexperia highlights a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s…
Taiwan Semiconductors announced the TUAS8x Series of surface-mount device (SMD) rectifiers, available with voltage…
Taiwan Semiconductors announced the TUAS8x Series of surface-mount device (SMD) rectifiers, available with voltage ratings from 200V-1000V.
Alpha and Omega Semiconductor announces the release of new 1200V SiC MOSFET with optimized temperature and switching…
Alpha and Omega Semiconductor announces the release of new 1200V SiC MOSFET with optimized temperature and switching behavior for high-efficiency…
Smart homes are becoming more and more widespread across the globe, and with them, new systems must facilitate powerful…
Smart homes are becoming more and more widespread across the globe, and with them, new systems must facilitate powerful 5G technologies.
Power Integrations announced that its InnoSwitch™3-MX isolated switcher IC family has been expanded with the addition…
Power Integrations announced that its InnoSwitch™3-MX isolated switcher IC family has been expanded with the addition of three new PowiGaN™…
Powerhouse semiconductor company Cree recently announced the Wolfspeed 650V silicon carbide MOSFETs…
Powerhouse semiconductor company Cree recently announced the Wolfspeed 650V silicon carbide MOSFETs (metal-oxide-semiconductor field-effect…
Transphorm announces its partnership with Microchip Technology.
Transphorm announces its partnership with Microchip Technology.
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