Nexperia Announces Next Generation 650V GaN TechnologyJune 07, 2020 by Nexperia
Nexperia highlights a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging.
Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD
Image courtesy of Nexperia
Nijmegen, June X, 2020: Nexperia, the expert in essential semiconductors, has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers and controls.
The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 mΩ (max., 33 mΩ typ. At 25 °C) with CCPAK surface-mount versions. Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.
Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director commented: “Customers need a highly-efficient, cost-effective solution for high power conversion at 650 V and around the 30-40 mΩ RDS(on), where applications include on-board chargers, DC/DC converters and traction inverters in electric vehicles, and industrial power supplies in the 1.5-5 kW range for titanium-grade rack mounted telecoms, 5G and datacenters. Nexperia continues to invest in the development and expansion of its range of products using next generation GaN processes, initially releasing traditional TO-247 versions and bare die format for power module makers, followed by our high-performance surface mount CCPAK packages."
Nexperia’s CCPAK surface mount packaging adopts Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK GaN FETs are available in top- or bottom-cooled configurations making them very versatile and help further improving heat dissipation.
650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK are sampling now. More information including product specs and datasheets is available at GaN FETs.
Nexperia is the expert in high-volume production of discrete and MOSFET components and analog & logic ICs that meet the stringent standards set by the Automotive industry. With an absolute focus on efficiency, Nexperia consistently produces the essential semiconductors required by every electronic design in the world: more than 90 billion annually. Products that are benchmarks in efficiency - in process, size, power and performance - with industry-leading small packages that save valuable energy and space.
With decades of experience, supplying to the world’s biggest companies, Nexperia has over 11,000 employees across Asia, Europe and the U.S., offering global support. The company has an extensive IP portfolio and is certified to IATF 16949, ISO 9001, ISO 14001 and OHSAS 18001.