Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…
EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio,…
EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in…
KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in surface mount device (SMD)…
Power Integrations announced its LinkSwitch-TN2, a high-reliability, space-saving buck/flyback switcher ICs targeting 400…
Power Integrations announced its LinkSwitch-TN2, a high-reliability, space-saving buck/flyback switcher ICs targeting 400 VDC EV applications
Infineon Technologies launches the CoolSiC™ MOSFETs 1700Vs optimized for flyback topologies compatible with common PWM…
Infineon Technologies launches the CoolSiC™ MOSFETs 1700Vs optimized for flyback topologies compatible with common PWM controllers.
X-FAB highlights the availability of new medium-voltage transistors – complementing the company’s leading 180nm…
X-FAB highlights the availability of new medium-voltage transistors – complementing the company’s leading 180nm BCD-on-SOI technology platform…
This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off…
This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off frequencies, the MOSHEMTs.
This article highlights EPC 15 V, 26 mΩ, eGaN FET with a 28 A pulsed current rating that is perfectly suited to use for…
This article highlights EPC 15 V, 26 mΩ, eGaN FET with a 28 A pulsed current rating that is perfectly suited to use for firing the lasers in lidar…
This article highlights Nexperia gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA…
This article highlights Nexperia gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA that is low RDS(on) - down to…
APEX Introduces MP165 High Voltage MOSFET.
APEX Introduces MP165 High Voltage MOSFET.
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