Qorvo's 4 mΩ SiC JFET for solid-state circuit breakers provides significant advantages over traditional mechanical breakers. Andy Wilson…
Qorvo's 4 mΩ SiC JFET for solid-state circuit breakers provides significant advantages over traditional mechanical breakers. Andy Wilson…
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
Onsemi’s 7th generation IGBT modules simplify design and reduce costs in high-power applications. Onsemi spoke with…
Onsemi’s 7th generation IGBT modules simplify design and reduce costs in high-power applications. Onsemi spoke with EEPower about the products…
Gaia and Powerbox aim to meet stringent military standards with rugged power supplies.
Gaia and Powerbox aim to meet stringent military standards with rugged power supplies.
The MSC200LHI features 5 kV high isolation voltage required in high-speed gate driver circuits.
The MSC200LHI features 5 kV high isolation voltage required in high-speed gate driver circuits.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
Infineon’s state-of-the-art MOSFETs set new industry standards by offering high performance, increased power density,…
Infineon’s state-of-the-art MOSFETs set new industry standards by offering high performance, increased power density, and enhanced efficiency.
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ…
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ release IGBT and silicon…
The family of solid-state isolators uses coreless transformer technology to ramp up switching speeds while lowering power…
The family of solid-state isolators uses coreless transformer technology to ramp up switching speeds while lowering power dissipation by up to 70%.
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from…
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
Announced at APEC 2024, the highly integrated family of devices reduces package size and increases power density for designers.
Announced at APEC 2024, the highly integrated family of devices reduces package size and increases power density for designers.
Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more…
Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more reliable switching and…
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.
The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.
AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.
AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.
Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply…
Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply controllers in smart meters…
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
ROHM Semiconductor has launched a family of speech synthesis ICs. This article reviews the role of speech synthesis in…
ROHM Semiconductor has launched a family of speech synthesis ICs. This article reviews the role of speech synthesis in automotive applications and…
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