This is the first in a two-part round-up reviewing the innovations announced at PCIM 2024. EEPower was onsite to learn about the latest power…
This is the first in a two-part round-up reviewing the innovations announced at PCIM 2024. EEPower was onsite to learn about the latest power…
Gallium nitride will be a key enabler for high-temperature electronics, including possible missions to Venus.
Gallium nitride will be a key enabler for high-temperature electronics, including possible missions to Venus.
More than 620 exhibiting companies will showcase their products and innovations at PCIM Europe in Nuremburg. Here's a…
More than 620 exhibiting companies will showcase their products and innovations at PCIM Europe in Nuremburg. Here's a quick look at some…
Infineon's second-generation CoolSiC MOSFET devices target high-voltage industrial applications such as EV charging,…
Infineon's second-generation CoolSiC MOSFET devices target high-voltage industrial applications such as EV charging, industrial solar…
This article examines how GaN-based FETs enable high-performance motor inverters.
This article examines how GaN-based FETs enable high-performance motor inverters.
In case you missed our first-ever event for power engineers, you can still catch it on demand.
In case you missed our first-ever event for power engineers, you can still catch it on demand.
Don't miss EEPower's first free virtual conference and trade show for power engineers. Register now!
Don't miss EEPower's first free virtual conference and trade show for power engineers. Register now!
This article presents a price-performance analysis of the totem-pole power factor correction topology compared to other…
This article presents a price-performance analysis of the totem-pole power factor correction topology compared to other topologies.
Navitas revealed an artificial intelligence data center technology roadmap with three times the power to support…
Navitas revealed an artificial intelligence data center technology roadmap with three times the power to support exponential growth in AI power…
SiC MOSFET switching loss reduction is possible, but challenges exist in realizing high switching speeds during power…
SiC MOSFET switching loss reduction is possible, but challenges exist in realizing high switching speeds during power module operation.
Wide bandgap SiC technology plays a key role in the electrification of everything and will soon tackle other major…
Wide bandgap SiC technology plays a key role in the electrification of everything and will soon tackle other major challenges, such as overhauling…
Freight transportation, off-road and industrial vehicles, marine applications, and aviation contribute more than 55% of…
Freight transportation, off-road and industrial vehicles, marine applications, and aviation contribute more than 55% of the total greenhouse gas…
This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic…
This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic gate drivers with GaN FETs,…
This article examines the reasons GaN power devices work for power conversion applications in space and how their…
This article examines the reasons GaN power devices work for power conversion applications in space and how their resistance to radiation makes…
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
A new generation of GaN devices pushes the envelope in terms of efficiency, power density, and response.
A new generation of GaN devices pushes the envelope in terms of efficiency, power density, and response.
Two major companies make acquisitions impacting wide bandgap semiconductors and software-defined vehicle technology for…
Two major companies make acquisitions impacting wide bandgap semiconductors and software-defined vehicle technology for electric vehicles.
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
In this article, we deep-dive into modular design evaluation, how the modular design concept works, and how to reap its benefits.
In this article, we deep-dive into modular design evaluation, how the modular design concept works, and how to reap its benefits.
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