The collaboration will see GaN Systems supply BMW Group with high-performance, automotive-grade GaN power transistors.
The collaboration will see GaN Systems supply BMW Group with high-performance, automotive-grade GaN power transistors.
Researchers look to develop highway infrastructure with magnetizable concrete that can charge electric vehicles while driving.
Researchers look to develop highway infrastructure with magnetizable concrete that can charge electric vehicles while driving.
The omnipresent trend in Power Electronics for higher performances at smaller space require a quick, effective and…
The omnipresent trend in Power Electronics for higher performances at smaller space require a quick, effective and cost-efficient heat-transfer…
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental…
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental conditions while…
Silicon Designs, Inc., today announced that three of its industry best-selling industrial-grade surface mount MEMS…
Silicon Designs, Inc., today announced that three of its industry best-selling industrial-grade surface mount MEMS capacitive accelerometer chip…
Nexperia announces the commencement of its virtual, power electronics-focused Power Live conference.
Nexperia announces the commencement of its virtual, power electronics-focused Power Live conference.
California semiconductor manufacturer Transphorm closed its acquisition of the high-volume AFSW wafer fab in Japan.
California semiconductor manufacturer Transphorm closed its acquisition of the high-volume AFSW wafer fab in Japan.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The gate drivers separately target the popular multiple parallel EconoDual module or the “New Dual” 100 mm x 140 mm…
The gate drivers separately target the popular multiple parallel EconoDual module or the “New Dual” 100 mm x 140 mm IGBT modules.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
Onsemi is acquiring SiC materials provider GT Advanced Technologies to meet increased demand in the EV and infrastructure markets.
Onsemi is acquiring SiC materials provider GT Advanced Technologies to meet increased demand in the EV and infrastructure markets.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for…
The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for designing and implementing…
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the…
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the driver to operate from a…
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
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