California semiconductor manufacturer Transphorm closed its acquisition of the high-volume AFSW wafer fab in Japan.
California semiconductor manufacturer Transphorm closed its acquisition of the high-volume AFSW wafer fab in Japan.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The gate drivers separately target the popular multiple parallel EconoDual module or the “New Dual” 100 mm x 140 mm…
The gate drivers separately target the popular multiple parallel EconoDual module or the “New Dual” 100 mm x 140 mm IGBT modules.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
Onsemi is acquiring SiC materials provider GT Advanced Technologies to meet increased demand in the EV and infrastructure markets.
Onsemi is acquiring SiC materials provider GT Advanced Technologies to meet increased demand in the EV and infrastructure markets.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for…
The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for designing and implementing…
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the…
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the driver to operate from a…
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
Cree and STMicroelectronics are expanding their supply agreement to manage higher production volumes.
Cree and STMicroelectronics are expanding their supply agreement to manage higher production volumes.
British battery startup Nexeon will lead a 12-month project to deliver test EV battery cells combining lithium-ion cell…
British battery startup Nexeon will lead a 12-month project to deliver test EV battery cells combining lithium-ion cell design with silicon anode…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The device integrates all three bottom shunt amplifiers and can support external MOSFETs for motor currents of up to 100 amps.
The device integrates all three bottom shunt amplifiers and can support external MOSFETs for motor currents of up to 100 amps.
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
High-performance IGBT modules switch currents in the kA range, whereby unwanted and in some cases harmful voltage…
High-performance IGBT modules switch currents in the kA range, whereby unwanted and in some cases harmful voltage overshoots can occur due to DC…
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