ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.
ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.
The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.
The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.
Changing its name to onsemi, Arizona-based power giant ON Semiconductor announced plans to expand its reach in the…
Changing its name to onsemi, Arizona-based power giant ON Semiconductor announced plans to expand its reach in the industrial and automotive…
The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN…
The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN Transistor.
Hon Hai Technology Group, also known as Foxconn, has signed a six-inch wafer fab transaction with non-volatile memory…
Hon Hai Technology Group, also known as Foxconn, has signed a six-inch wafer fab transaction with non-volatile memory (NVM) manufacturer Macronix.
The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.
The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.
The effort marks ST’s commitment to the high power, high voltage requirements of the automotive and industrial markets.
The effort marks ST’s commitment to the high power, high voltage requirements of the automotive and industrial markets.
Companies Introduce World’s First Bridgeless Totem Pole PFC Evaluation Board.
Companies Introduce World’s First Bridgeless Totem Pole PFC Evaluation Board.
EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary…
EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary communications satellites.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
The new active clamp flyback (ACF) controller operates over input ranges of 90 to 165VAC and enables efficiencies of up to 95%
The new active clamp flyback (ACF) controller operates over input ranges of 90 to 165VAC and enables efficiencies of up to 95%
GaN Systems is teaming up with precision motor control startup FTEX to deliver GaN-based motor drives for e-scooters,…
GaN Systems is teaming up with precision motor control startup FTEX to deliver GaN-based motor drives for e-scooters, e-bikes, and e-mopeds.
Murata high-density silicon capacitors are developed with a semiconductor MOS process and are using the third dimension…
Murata high-density silicon capacitors are developed with a semiconductor MOS process and are using the third dimension to substantially increase…
The Starkrimson Streamer Ultra represents a new kind of high-end audio system that offers commanding performance in a…
The Starkrimson Streamer Ultra represents a new kind of high-end audio system that offers commanding performance in a discreet package. It can…
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
Learn about the principles of operation of p-channel and n-channel enhancement-mode MOSFETs.
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the…
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses
The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses
EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion…
EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical…
Nexperia has announced that its semiconductor equipment manufacturing division ITEC is launching as a separate independent entity.
Nexperia has announced that its semiconductor equipment manufacturing division ITEC is launching as a separate independent entity.
The unit features thermal battery protection and automatic selection of three charging modes: automatic trickle charge,…
The unit features thermal battery protection and automatic selection of three charging modes: automatic trickle charge, constant current, and…
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