Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
The N-Channel device’s low-spike capability serves to diminish overshoot in power switching applications.
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the…
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the driver to operate from a…
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
This improved power rating allows the RNCF0201 to be used for applications that may have previously required an 0402 or…
This improved power rating allows the RNCF0201 to be used for applications that may have previously required an 0402 or larger size chip resistor.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
Cree and STMicroelectronics are expanding their supply agreement to manage higher production volumes.
Cree and STMicroelectronics are expanding their supply agreement to manage higher production volumes.
SPTS technologies presents advanced wafer processing solutions for backside metallization in power devices, which is…
SPTS technologies presents advanced wafer processing solutions for backside metallization in power devices, which is critical for improving overall…
The new series of devices, aimed at automotive applications, features overvoltage, undervoltage, and analog monitoring in…
The new series of devices, aimed at automotive applications, features overvoltage, undervoltage, and analog monitoring in a single IC.
British battery startup Nexeon will lead a 12-month project to deliver test EV battery cells combining lithium-ion cell…
British battery startup Nexeon will lead a 12-month project to deliver test EV battery cells combining lithium-ion cell design with silicon anode…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The device integrates all three bottom shunt amplifiers and can support external MOSFETs for motor currents of up to 100 amps.
The device integrates all three bottom shunt amplifiers and can support external MOSFETs for motor currents of up to 100 amps.
Infineon gets behind the wheels of the VW ID.4 USA tour and provides its cutting-edge, clean semiconductor technology to…
Infineon gets behind the wheels of the VW ID.4 USA tour and provides its cutting-edge, clean semiconductor technology to help power the electric…
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
High-performance IGBT modules switch currents in the kA range, whereby unwanted and in some cases harmful voltage…
High-performance IGBT modules switch currents in the kA range, whereby unwanted and in some cases harmful voltage overshoots can occur due to DC…
Texas Instruments acquires Micron’s 300-mm wafer fabrication facility for $1.5 billion, a hefty investment to boost its…
Texas Instruments acquires Micron’s 300-mm wafer fabrication facility for $1.5 billion, a hefty investment to boost its production capacity.
The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.
The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than…
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad…
A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.
A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.
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