This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with SiC SBD in hybrid modules.…
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with SiC SBD in hybrid modules.…
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
GaN Systems announces its entry into a collaboration with EPowerlabs to deliver up a new converter, DDC48-1K, for use in…
GaN Systems announces its entry into a collaboration with EPowerlabs to deliver up a new converter, DDC48-1K, for use in mobility applications.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
New device completes Microchip’s family of Vref products providing increased reliability and AEC-Q100 qualification.
New device completes Microchip’s family of Vref products providing increased reliability and AEC-Q100 qualification.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
Researchers develop microbatteries that are as thick as three sheets of paper, and can be embedded into sensor circuitry.
Researchers develop microbatteries that are as thick as three sheets of paper, and can be embedded into sensor circuitry.
GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining…
GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
X-FAB Semiconductor Foundries announces completion of a licensing agreement with X-Celeprint and becomes world’s first…
X-FAB Semiconductor Foundries announces completion of a licensing agreement with X-Celeprint and becomes world’s first foundry to offer…
The new package enables EM/IR assessment of analog, digital, and mixed-signal IC designs of any size before committing to silicon.
The new package enables EM/IR assessment of analog, digital, and mixed-signal IC designs of any size before committing to silicon.
Japanese electronics giant ROHM is partnering with China’s Geely Automobile Group to develop advanced power…
Japanese electronics giant ROHM is partnering with China’s Geely Automobile Group to develop advanced power technologies for automotive…
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The adoption of USBPD 3.0 and Type-C connectors is expected to standardize power adaptors across previously segmented…
The adoption of USBPD 3.0 and Type-C connectors is expected to standardize power adaptors across previously segmented electronic markets. Gone are…
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
The new devices save power and space in advanced driver assistance systems (ADAS) applications and also serve to reduce…
The new devices save power and space in advanced driver assistance systems (ADAS) applications and also serve to reduce EMI generation.
Central Semiconductor Corp., introduces its CAK3-012C & CAK6-042C series of 5G bi-directional transient voltage…
Central Semiconductor Corp., introduces its CAK3-012C & CAK6-042C series of 5G bi-directional transient voltage suppressors (TVS).
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