ROHM’s New Dual MOSFETs Feature Withstand Voltages of 40 and 60 Volts
The new series includes 8 dual n-channel devices and 4 units featuring one p-channel and one n-channel MOSFET each.
ROHM’s QH8Mx5/SH8Mx5 dual MOSFETs were designed with 24 Volt systems in mind. They come equipped with the extra voltage margins needed to protect against the voltage fluctuations and high levels of EMI endemic to tough industrial environments. Members of the series have the low RDS(ON)s and high switching speed capabilities necessary both for saving board space and for providing the high levels of efficiency necessary for today’s demanding applications.
The new units are available in SOP8 and TSMT8 packages. Image courtesy of ROHM
N-Channel and P-Channel MOSFETS
N-channel MOSFETs offer better specifications in some key areas, like RDS(ON)s, than p-channel versions do. However, providing high-side drive via n-channel devices takes some engineering, and also results in the need for auxiliary components, taking up precious board space and increasing costs. By offering both dual n-channel MOSFETs and units that are composed of one n-channel MOSFET and one p-channel device, ROHM offers the designer the freedom to choose.
Low Switching Losses
ROHM asserts that, when compared to other manufacturers’ ±40V dual n-channel and p-channel devices, members of the new series feature 61% lower p-channel (Pch) RDS(ON)s. The n-channel (Nch) side is said to offer -39% lower RDS(ON)s than do competitive offerings. This is of fundamental importance because these MOSFETs are intended for use in switching applications, where low switching resistance translates into low power losses.
Saving Board Space
ROHM points out that typical single nch or pch MOSFETs in this class take up the same amount of space as one ROHM’s dual Nch+Pch MOSFET. This translates directly into a board space saving of 50%, not to mention reducing the BOM count by one.
Another example cited is replacing a conventional dual nch+pch MOSFET in a 6.0 x 5.0 x 1.75mm SOP8 package with a 2.8 x 3.0 by 0.8mm TSMT8 device from ROHM, effecting space savings in all 3 dimensions.
Dual N-Channel (Nch+Nch) MOSFETs
A glance at the table directly below reveals eight Dual N-Channel (Nch+Nch).
|
Withstand Voltage |
ID (drain Current) |
PD (Power Dissipation) |
RDS(ON) at VGS = 10V |
Package |
|
|
SH8KB7 |
40V |
13.5A |
2 Watts |
8.4mΩ |
SOP8 |
|
SH8KB6 |
40V |
8.5A |
2 Watts |
19.4mΩ |
SOP8 |
|
SH8KC7 |
60V |
10.5A |
2 Watts |
12.4mΩ |
SOP8 |
|
SH8KC6 |
60V |
6.5A |
2 Watts |
32mΩ |
SOP8 |
|
QH8KB6 |
40V |
8A |
1.5 Watts |
17.7mΩ |
TSMT8 |
|
QH8KB5 |
40V |
4.5A |
1.5 Watts |
44mΩ |
TSMT8 |
|
QH8KC6 |
60V |
5.5A |
1.5 Watts |
30mΩ |
TSMT8 |
|
QH8KC5 |
60V |
3A |
1.5 Watts |
90mΩ |
TSMT8 |
Many manufacturers, including ROHM, offer drivers for these MOSFETs. ROHM offers two examples:
- SH8KB6 (+40V Nch+Nch Dual MOSFET) + BD63002AMUV (3-Phase Brushless pre-driver IC)
- SH8KB6 (+40V Nch+Nch Dual MOSFET) + BM62300MUV (3-Phase Brushless pre-driver IC)
Dual Devices with one N-Channel and one P-Channel (Nch + Pch) MOSFETS
Note that in the table below, each MOSFET has two sets of specifications, one for the n-channel MOSFET and another set for the p-channel MOSFET
|
Withstand Voltage |
ID (drain Current) |
RDS(ON) at VGS = 10V |
PD (Power Dissipation) |
Package |
||
|
SH8MB5 |
Nch |
40V |
8.5A |
19.4mΩ |
2 Watts |
SOP8 |
|
Pch |
-40V |
-8.5A |
16.8mΩ |
|||
|
SH8MC5 |
Nch |
60 |
6.5A |
32mΩ |
||
|
Pch |
-60 |
-7A |
33mΩ |
|||
|
QH8MB5 |
Nch |
40V |
4.5A |
44mΩ |
1.5 watts |
TSM8 |
|
Pch |
-40V |
-5A |
41mΩ |
|||
|
QH8MC5 |
Nch |
60 |
3A |
90mΩ |
||
|
Pch |
-60 |
-3.5A |
91mΩ |
An example of a complementary ROHM driver and its purpose is listed below:
QH8MC5 (±60V Nch+Pch Dual MOSFET) + BD63001AMUV (3-Phase Brushless Motor Pre-driver IC)
Environmental Considerations
- RoHS compliant
- Halogen Free
