The third-generation C3M MOSFET technology delivers up to 20% lower switching losses than competing silicon carbide…
The third-generation C3M MOSFET technology delivers up to 20% lower switching losses than competing silicon carbide MOSFETs and provides the lowest…
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
Infineon Technologies expands its Schottky Diode portfolio by adding six devices in D2PAK real 2-pin package.
Infineon Technologies expands its Schottky Diode portfolio by adding six devices in D2PAK real 2-pin package.