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UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.


TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…


GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…


new products Oct 30, 2018 by GaN Systems
Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

SiC MOSFETs and Digital Control enable Isolated 1U 11kW Bidirectional DC-DCs

SiC MOSFETs and Digital Control enable Isolated 1U 11kW Bidirectional DC-DCs

Gen-3 SiC JFETs with 1200V and 650V Options

Gen-3 SiC JFETs with 1200V and 650V Options

UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options

UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs,…


DC-DCs Optimized for Radio Frequency Power Amplifiers using GaN Transistors

DC-DCs Optimized for Radio Frequency Power Amplifiers using GaN Transistors

Littelfuse Announces 1700V, 1-Ohm SiC MOSFET

Littelfuse Announces 1700V, 1-Ohm SiC MOSFET

STMicroelectronics and Leti Develop GaN-on-Silicon Technology for Power Conversion Applications

STMicroelectronics and Leti Develop GaN-on-Silicon Technology for Power Conversion Applications

STMicroelectronics and Leti today announced their cooperation to industrialize GaN (gallium nitride)-on-silicon technologies for power switching…


650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

GaN Microelectronics for Next-Gen Military and Communications Systems

GaN Microelectronics for Next-Gen Military and Communications Systems

650-Volt SiC Power Schottky Rectifier Series Lowers System Costs

650-Volt SiC Power Schottky Rectifier Series Lowers System Costs

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

600-V 70mΩ GaN Power Stage with Integrated Driver and Protection

600-V 70mΩ GaN Power Stage with Integrated Driver and Protection

Full-SiC 1200V 500A Low Inductance H-Bridge  Phase-leg Module in Standard Footprint

Full-SiC 1200V 500A Low Inductance H-Bridge Phase-leg Module in Standard Footprint

This article features Proton-Electrotex MCDA – an advanced 1200V full-SiC module in well-known footprint, featuring an ultra-low inductance…


Flex Power Modules Debuts 700W Half-Brick DC-DC Converters to Power RFPA Applications in LDMOS or GaN Technology

Flex Power Modules Debuts 700W Half-Brick DC-DC Converters to Power RFPA Applications in LDMOS or GaN Technology

Flex Power Modules announced the release of the PKJ4000 series of DC/DC converters primarily targeting radio frequency power amplifier (RFPA)…


700W Half-Brick DC-DCs for RFPA Designs in LDMOS or GaN

700W Half-Brick DC-DCs for RFPA Designs in LDMOS or GaN

2.5kW GaN-Based Half-Bridge Evaluation Board

2.5kW GaN-Based Half-Bridge Evaluation Board

PowerSphyr and GaN Systems Lead the Wireless Charging Revolution

PowerSphyr and GaN Systems Lead the Wireless Charging Revolution

PowerSphyr recently announced a strategic agreement to bring state-of-the-art GaN-based wireless power systems.


new products Aug 15, 2018 by GaN Systems