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Energize the Grid with Texas Instruments LMG3410 600V GaN Power Stage

Energize the Grid with Texas Instruments LMG3410 600V GaN Power Stage

GaN technology continues to help designers create smaller, more efficient power converters and enable the next generation of high-density power…


Galvanic-Isolated Gate Driver Controls and Protects SiC or Si Power Transistors

Galvanic-Isolated Gate Driver Controls and Protects SiC or Si Power Transistors

SiC Power Devices are First to Meet Automotive AEC-Q101 Standards

SiC Power Devices are First to Meet Automotive AEC-Q101 Standards

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

ON Semi Announces SiC Diodes for Demanding Automotive Applications

ON Semi Announces SiC Diodes for Demanding Automotive Applications

Intelligent GaN Power Solutions for Consumer, Industrial and Automotive Applications

Intelligent GaN Power Solutions for Consumer, Industrial and Automotive Applications

SiC 1200V Schottky Diodes Shrink Energy Costs and Space Requirements

SiC 1200V Schottky Diodes Shrink Energy Costs and Space Requirements

1200V SiC MOSFET for EV Drivetrains

1200V SiC MOSFET for EV Drivetrains

Gate Driver Core Optimized for SiC MOSFET Modules

Gate Driver Core Optimized for SiC MOSFET Modules

Microsemi Announces Extremely Low Inductance SP6LI Package Dedicated to SiC MOSFET Technology

Microsemi Announces Extremely Low Inductance SP6LI Package Dedicated to SiC MOSFET Technology

Microsemi Corporation, a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today…


new products May 31, 2018 by Microsemi
Microsemis New 30 kW Three-Phase Vienna PFC Reference Design Leveraging its SiC Diodes and MOSFETs

Microsemis New 30 kW Three-Phase Vienna PFC Reference Design Leveraging its SiC Diodes and MOSFETs

Microsemi Corporation announced the availability of its new scalable 30-kilowatt (kW), three-phase Vienna power factor correction (PFC) topology…


new products May 29, 2018 by Microsemi
Next-Gen AEC-Q101 SiC 1200V MOSFETs and 700V Schottky Barrier Diodes

Next-Gen AEC-Q101 SiC 1200V MOSFETs and 700V Schottky Barrier Diodes

1200V SiC FETs Replace IGBTs and Si FETs without Changes to Gate Drive

1200V SiC FETs Replace IGBTs and Si FETs without Changes to Gate Drive

UnitedSiC’s 1200V SiC FETs Deliver Industry Upgrade Path for IGBT Si SiC-MOSFET Users

UnitedSiC’s 1200V SiC FETs Deliver Industry Upgrade Path for IGBT Si SiC-MOSFET Users

UnitedSiC introduces its new UJ3C1200 series of SiC JFET cascades that simplifies design upgrades and provides an alternative-purchasing source for…


400W and 800W GaN Half-Bridge Evaluation Board

400W and 800W GaN Half-Bridge Evaluation Board

Compact UL 1577 Certified Drivers for IGBTs and SiC MOSFETs

Compact UL 1577 Certified Drivers for IGBTs and SiC MOSFETs

Rutronik Recom Releases Converter Series for Fast-Switching GaN Drivers

Rutronik Recom Releases Converter Series for Fast-Switching GaN Drivers

Rutronik Inc., a leading global broad-line stocking distributor with a comprehensive portfolio of products and technology solutions for IoT and…


new products May 09, 2018 by Rutronik
GaN-based 300V-in, 5A-out Half-Bridge Development Board with Digital Isolation

GaN-based 300V-in, 5A-out Half-Bridge Development Board with Digital Isolation

350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

SiC Enables 98.5% Efficient 6.6-kW Totem-Pole PFC Reference Design

SiC Enables 98.5% Efficient 6.6-kW Totem-Pole PFC Reference Design